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 S29PL-J
128/128/64/32 Megabit (8/8/4/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIOTM Control
S29PL-J Cover Sheet
Data Sheet (Advance Information)
Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information, Preliminary, or Full Production. See Notice On Data Sheet Designations for definitions.
Publication Number S29PL-J_00
Revision A
Amendment 9
Issue Date September 22, 2006
Data
Sheet
(Advance
Information)
Notice On Data Sheet Designations
Spansion Inc. issues data sheets with Advance Information or Preliminary designations to advise readers of product information or intended specifications throughout the product life cycle, including development, qualification, initial production, and full production. In all cases, however, readers are encouraged to verify that they have the latest information before finalizing their design. The following descriptions of Spansion data sheet designations are presented here to highlight their presence and definitions.
Advance Information
The Advance Information designation indicates that Spansion Inc. is developing one or more specific products, but has not committed any design to production. Information presented in a document with this designation is likely to change, and in some cases, development on the product may discontinue. Spansion Inc. therefore places the following conditions upon Advance Information content:
"This document contains information on one or more products under development at Spansion Inc. The information is intended to help you evaluate this product. Do not design in this product without contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed product without notice."
Preliminary
The Preliminary designation indicates that the product development has progressed such that a commitment to production has taken place. This designation covers several aspects of the product life cycle, including product qualification, initial production, and the subsequent phases in the manufacturing process that occur before full production is achieved. Changes to the technical specifications presented in a Preliminary document should be expected while keeping these aspects of production under consideration. Spansion places the following conditions upon Preliminary content:
"This document states the current technical specifications regarding the Spansion product(s) described herein. The Preliminary status of this document indicates that product qualification has been completed, and that initial production has begun. Due to the phases of the manufacturing process that require maintaining efficiency and quality, this document may be revised by subsequent versions or modifications due to changes in technical specifications."
Combination
Some data sheets contain a combination of products with different designations (Advance Information, Preliminary, or Full Production). This type of document distinguishes these products and their designations wherever necessary, typically on the first page, the ordering information page, and pages with the DC Characteristics table and the AC Erase and Program table (in the table notes). The disclaimer on the first page refers the reader to the notice on this page.
Full Production (No Designation on Document)
When a product has been in production for a period of time such that no changes or only nominal changes are expected, the Preliminary designation is removed from the data sheet. Nominal changes may include those affecting the number of ordering part numbers available, such as the addition or deletion of a speed option, temperature range, package type, or VIO range. Changes may also include those needed to clarify a description or to correct a typographical error or incorrect specification. Spansion Inc. applies the following conditions to documents in this category:
"This document states the current technical specifications regarding the Spansion product(s) described herein. Spansion Inc. deems the products to have been in sufficient production volume such that subsequent versions of this document are not expected to change. However, typographical or specification corrections, or modifications to the valid combinations offered may occur."
Questions regarding these document designations may be directed to your local sales office.
ii
S29PL-J
S29PL-J_00_A9 September 22, 2006
S29PL-J
128/128/64/32 Megabit (8/8/4/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIOTM Control
Data Sheet (Advance Information)
Distinctive Characteristics
Architectural Advantages
128/128/64/32 Mbit Page Mode devices - Page size of 8 words: Fast page read access from random locations within the page Single power supply operation - Full Voltage range: 2.7 to 3.6 volt read, erase, and program operations for battery-powered applications Dual Chip Enable inputs (only in PL129J) - Two CE# inputs control selection of each half of the memory space Simultaneous Read/Write Operation - Data can be continuously read from one bank while executing erase/ program functions in another bank - Zero latency switching from write to read operations FlexBank Architecture (PL127J/PL064J/PL032J) - 4 separate banks, with up to two simultaneous operations per device - Bank A: PL127J -16 Mbit (4 Kw x 8 and 32 Kw x 31) PL064J - 8 Mbit (4 Kw x 8 and 32 Kw x 15) PL032J - 4 Mbit (4 Kw x 8 and 32 Kw x 7) - Bank B: PL127J - 48 Mbit (32 Kw x 96) PL064J - 24 Mbit (32 Kw x 48) PL032J - 12 Mbit (32 Kw x 24) - Bank C: PL127J - 48 Mbit (32 Kw x 96) PL064J - 24 Mbit (32 Kw x 48) PL032J - 12 Mbit (32 Kw x 24) - Bank D: PL127J -16 Mbit (4 Kw x 8 and 32 Kw x 31) PL064J - 8 Mbit (4 Kw x 8 and 32 Kw x 15) PL032J - 4 Mbit (4 Kw x 8 and 32 Kw x 7) FlexBank Architecture (PL129J) - 4 separate banks, with up to two simultaneous operations per device - CE#1 controlled banks: Bank 1A: PL129J - 16Mbit (4Kw x 8 and 32Kw x 31) Bank 1B: PL129J - 48Mbit (32Kw x 96) - CE#2 controlled banks: Bank 2A: PL129J - 48 Mbit (32Kw x 96) Bank 2B: PL129J - 16Mbit (4Kw x 8 and 32Kw x 31) Enhanced VersatileI/O (VIO) Control - Output voltage generated and input voltages tolerated on all control inputs and I/Os is determined by the voltage on the VIO pin - VIO options at 1.8 V and 3 V I/O for PL127J and PL129J devices - 3V VIO for PL064J and PL032J devices Secured Silicon Sector region - Up to 128 words accessible through a command sequence - Up to 64 factory-locked words - Up to 64 customer-lockable words Both top and bottom boot blocks in one device Manufactured on 110 nm process technology Data Retention: 20 years typical Cycling Endurance: 1 million cycles per sector typical
Performance Characteristics
High Performance - Page access times as fast as 20 ns - Random access times as fast as 55 ns Power consumption (typical values at 10 MHz) - 45 mA active read current - 17 mA program/erase current - 0.2 A typical standby mode current
Software Features
Software command-set compatible with JEDEC 42.4 standard - Backward compatible with Am29F, Am29LV, Am29DL, and AM29PDL families and MBM29QM/RM, MBM29LV, MBM29DL, MBM29PDL families CFI (Common Flash Interface) compliant - Provides device-specific information to the system, allowing host software to easily reconfigure for different Flash devices Erase Suspend / Erase Resume - Suspends an erase operation to allow read or program operations in other sectors of same bank Program Suspend / Program Resume - Suspends a program operation to allow read operation from sectors other than the one being programmed Unlock Bypass Program command - Reduces overall programming time when issuing multiple program command sequences
Hardware Features
Ready/Busy# pin (RY/BY#) - Provides a hardware method of detecting program or erase cycle completion Hardware reset pin (RESET#) - Hardware method to reset the device to reading array data WP#/ ACC (Write Protect/Acceleration) input - At VIL, hardware level protection for the first and last two 4K word sectors. - At VIH, allows removal of sector protection - At VHH, provides accelerated programming in a factory setting Persistent Sector Protection - A command sector protection method to lock combinations of individual sectors and sector groups to prevent program or erase operations within that sector - Sectors can be locked and unlocked in-system at VCC level Password Sector Protection - A sophisticated sector protection method to lock combinations of individual sectors and sector groups to prevent program or erase operations within that sector using a user-defined 64-bit password Package options - Standard discrete pinouts 11 x 8 mm, 80-ball Fine-pitch BGA (PL127J) (VBG080) 8.15 x 6.15 mm, 48-ball Fine pitch BGA (PL064J/PL032J) (VBK048) - MCP-compatible pinout 8 x 11.6 mm, 64-ball Fine-pitch BGA (PL127J) 7 x 9 mm, 56-ball Fine-pitch BGA (PL064J and PL032J) Compatible with MCP pinout, allowing easy integration of RAM into existing designs - 20 x 14 mm, 56-pin TSOP (PL127J) (TS056)
Publication Number S29PL-J_00
Revision A
Amendment 9
Issue Date September 22, 2006
This document contains information on one or more products under development at Spansion Inc. The information is intended to help you evaluate this product. Do not design in this product without contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed product without notice.
Data
Sheet
(Advance
Information)
General Description
The PL127J/PL129J/PL064J/PL032J is a 128/128/64/32 Mbit, 3.0 volt-only Page Mode and Simultaneous Read/Write Flash memory device organized as 8/8/4/2 Mwords. The devices are offered in the following packages: - 11 mm x 8 mm, 80-ball Fine-pitch BGA standalone (PL127J) - 8 mm x 11.6 mm, 64-ball Fine-pitch BGA multi-chip compatible (PL127J) - 8.15 mm x 6.15 mm, 48-ball Fine-pitch BGA standalone (PL064J/PL032J) - 7 mm x 9 mm, 56-ball Fine-pitch BGA multi-chip compatible (PL064J and PL032J) - 20 mm x 14 mm, 56-pin TSOP (PL127J) The word-wide data (x16) appears on DQ15-DQ0. This device can be programmed in-system or in standard EPROM programmers. A 12.0 V VPP is not required for write or erase operations. The device offers fast page access times of 20 to 30 ns, with corresponding random access times of 55 to 70 ns, respectively, allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. Note: Device PL129J has 2 chip enable inputs (CE1#, CE2#).
2
S29PL-J
S29PL-J_00_A9 September 22, 2006
Data
Sheet
(Advance
Information)
Table of Contents
Distinctive Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1. Simultaneous Read/Write Operation with Zero Latency. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1.1 Page Mode Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1.2 Standard Flash Memory Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Product Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Simultaneous Read/Write Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Simultaneous Read/Write Block Diagram (PL129J) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1 Special Package Handling Instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2 80-Ball Fine-Pitch BGA--PL127J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.3 64-Ball Fine-Pitch BGA--MCP Compatible--PL127J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.4 48-Ball Fine-Pitch BGA, PL064J and PL032J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5 56-Pin TSOP 20 x 14 mm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.6 56-Ball Fine-Pitch Ball Grid Array, PL064J and PL032J . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 14 14 15 16 17 18
2. 3. 4. 5. 6. 7.
8. 9. 10.
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.1 Requirements for Reading Array Data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.2 Simultaneous Read/Write Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.3 Writing Commands/Command Sequences . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.4 Standby Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.5 Automatic Sleep Mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.6 RESET#: Hardware Reset Pin. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.7 Output Disable Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.8 Autoselect Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.9 Selecting a Sector Protection Mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Sector Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.1 Persistent Sector Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.2 Password Sector Protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.3 WP# Hardware Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.4 Selecting a Sector Protection Mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Persistent Sector Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.1 Persistent Protection Bit (PPB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.2 Persistent Protection Bit Lock (PPB Lock). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.3 Dynamic Protection Bit (DYB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.4 Persistent Sector Protection Mode Locking Bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Password Protection Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.1 Password and Password Mode Locking Bit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.2 64-bit Password . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.3 Write Protect (WP#) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.4 High Voltage Sector Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.5 Temporary Sector Unprotect . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.6 Secured Silicon Sector Flash Memory Region . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7 Hardware Data Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 20 21 22 22 23 23 23 39 43 44 44 44 44 44 45 45 45 45 46 47 47 47 48 48 50 50 52
11.
12.
13.
September 22, 2006 S29PL-J_00_A9
S29PL-J
3
Data
Sheet
(Advance
Information)
14. 15.
Common Flash Memory Interface (CFI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 Command Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15.1 Reading Array Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15.2 Reset Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15.3 Autoselect Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15.4 Enter/Exit Secured Silicon Sector Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15.5 Word Program Command Sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15.6 Chip Erase Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15.7 Sector Erase Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15.8 Erase Suspend/Erase Resume Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15.9 Program Suspend/Program Resume Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15.10 Command Definitions Tables. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Write Operation Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16.1 DQ7: Data# Polling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16.2 RY/BY#: Ready/Busy#. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16.3 DQ6: Toggle Bit I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16.4 DQ2: Toggle Bit II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16.5 Reading Toggle Bits DQ6/DQ2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16.6 DQ5: Exceeded Timing Limits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16.7 DQ3: Sector Erase Timer. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 55 56 56 56 57 58 59 60 61 61 64 64 65 65 67 67 67 68
16.
17. 18. 19. 20.
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69 Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 AC Characteristic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20.1 Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20.2 Switching Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20.3 VCC Ramp Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20.4 Read Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20.5 Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20.6 Erase/Program Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20.7 Timing Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72 72 72 73 73 75 76 77
21. 22. 23.
Protect/Unprotect . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81 21.1 Controlled Erase Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83 BGA Pin Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85 Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23.1 VBG080--80-Ball Fine-pitch Ball Grid Array 8 x 11 mm Package (PL127J) . . . . . . . . . . . . . 23.2 VBH064--64-Ball Fine-pitch Ball Grid Array 8 x 11.6 mm package (PL127J). . . . . . . . . . . . 23.3 VBK048--48-Ball Fine-pitch Ball Grid Array 8.15 x 6.15 mm package (PL032J and PL064J) 88 23.4 VBU056--56-Ball Fine-pitch BGA 7 x 9mm package (PL064J and PL032J) . . . . . . . . . . . . 23.5 TS056--20 x 14 mm, 56-pin TSOP (PL127J) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24.1 Revision A0 (January 29, 2004). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24.2 Revision A1 (February 12, 2004) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24.3 Revision A2 (February 17, 2004) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24.4 Revision A3 (February 25, 2004) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24.5 Revision A4 (February 27, 2004) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24.6 Revision A5 (March 15, 2004) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24.7 Revision A6 (August 30, 2004) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24.8 Revision A7 (March 2, 2005) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24.9 Revision A8 (July 29, 2005) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24.10 Revision A9 (September 22, 2006) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86 86 87
89 90 91 91 91 91 91 92 92 92 92 93 93
24.
4
S29PL-J
S29PL-J_00_A9 September 22, 2006
Data
Sheet
(Advance
Information)
List of Tables
Table 10.1 Table 10.2 Table 10.3 Table 10.4 Table 10.5 Table 10.6 Table 10.7 Table 10.8 Table 10.9 Table 10.10 Table 10.11 Table 10.12 Table 10.13 Table 10.14 Table 10.15 Table 14.1 Table 14.2 Table 14.3 Table 14.4 Table 15.1 Table 15.2 Table 16.1 Table 19.1 Table 20.1 Table 20.2 Table 20.3 Table 20.4 Table 20.5 Table 21.1 Table 21.2 Table 21.3 Table 21.4 PL127J Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 PL129J Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 Page Select . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21 Bank Select . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21 PL127J Sector Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23 PL064J Sector Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29 PL032J Sector Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .32 S29PL129J Sector Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34 Secured Silicon Sector Addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .39 Autoselect Codes (High Voltage Method) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40 Autoselect Codes for PL129J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40 PL127J Boot Sector/Sector Block Addresses for Protection/Unprotection . . . . . . . . . . . . . . .41 PL129J Boot Sector/Sector Block Addresses for Protection/Unprotection . . . . . . . . . . . . . . .42 PL064J Boot Sector/Sector Block Addresses for Protection/Unprotection . . . . . . . . . . . . . . .43 Sector Protection Schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44 CFI Query Identification String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .53 System Interface String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .53 Device Geometry Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .54 Primary Vendor-Specific Extended Query . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .54 Memory Array Command Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .62 Sector Protection Command Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .63 Write Operation Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .68 CMOS Compatible . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .71 Test Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .72 Key To Switching Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .72 Read-Only Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .73 Hardware Reset (RESET#) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .75 Erase and Program Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .76 Temporary Sector Unprotect . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .81 Alternate CE# Controlled Erase and Program Operations . . . . . . . . . . . . . . . . . . . . . . . . . . .83 CE1#/CE2# Timing (S29PL129J only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .84 Erase And Programming Performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .84
September 22, 2006 S29PL-J_00_A9
S29PL-J
5
Data
Sheet
(Advance
Information)
List of Figures
Figure 7.1 Figure 7.2 Figure 7.3 Figure 7.4 Figure 7.5 Figure 13.1 Figure 13.2 Figure 13.3 Figure 15.1 Figure 15.2 Figure 16.1 Figure 16.2 Figure 17.1 Figure 20.1 Figure 20.2 Figure 20.3 Figure 20.4 Figure 20.5 Figure 20.6 Figure 20.7 Figure 20.8 Figure 20.9 Figure 20.10 Figure 20.11 Figure 20.12 Figure 21.1 Figure 21.2 Figure 21.3 Figure 21.4 80-Ball Fine-Pitch BGA, Top View, Balls Facing Down--PL127J . . . . . . . . . . . . . . . . . . . . . 14 64-Ball Fine-Pitch BGA, MCP Compatible, Top View, Balls Facing Down--PL127J . . . . . . 15 48-Ball Fine-Pitch BGA, Top View, Balls Facing Down--PL064J--PL032J: C4(A21)=NC . . . 16 56-Pin TSOP 20 x 14 mm Configuration--PL127J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 56-ball Fine-Pitch BGA, Top View, Balls Facing Down,--PL064J and PL032J,. . . . . . . . . . . 18 In-System Sector Protection/Sector Unprotection Algorithms . . . . . . . . . . . . . . . . . . . . . . . . 49 Temporary Sector Unprotect Operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 Secured Silicon Sector Protect Verify . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 Program Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 Erase Operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59 Data# Polling Algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 Toggle Bit Algorithm. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66 Maximum Overshoot Waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69 Test Setups . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72 Input Waveforms and Measurement Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73 Read Operation Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74 Page Read Operation Timings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74 Reset Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 Program Operation Timings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77 Accelerated Program Timing Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77 Chip/Sector Erase Operation Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78 Back-to-back Read/Write Cycle Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79 Data# Polling Timings (During Embedded Algorithms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79 Toggle Bit Timings (During Embedded Algorithms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 DQ2 vs. DQ6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 Temporary Sector Unprotect Timing Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81 Sector/Sector Block Protect and Unprotect Timing Diagram . . . . . . . . . . . . . . . . . . . . . . . . .82 Alternate CE# Controlled Write (Erase/Program) Operation Timings . . . . . . . . . . . . . . . . . . .83 Timing Diagram for Alternating Between CE1# and CE2# Control . . . . . . . . . . . . . . . . . . . . 84
6
S29PL-J
S29PL-J_00_A9 September 22, 2006
Data
Sheet
(Advance
Information)
1.
Simultaneous Read/Write Operation with Zero Latency
The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space into 4 banks, which can be considered to be four separate memory arrays as far as certain operations are concerned. The device can improve overall system performance by allowing a host system to program or erase in one bank, then immediately and simultaneously read from another bank with zero latency (with two simultaneous operations operating at any one time). This releases the system from waiting for the completion of a program or erase operation, greatly improving system performance. The device can be organized in both top and bottom sector configurations. The banks are organized as follows:
Bank A B C D PL127J Sectors 16 Mbit (4 Kw x 8 and 32 Kw x 31) 48 Mbit (32 Kw x 96) 48 Mbit (32 Kw x 96) 16 Mbit (4 Kw x 8 and 32 Kw x 31) PL064J Sectors 8 Mbit (4 Kw x 8 and 32 Kw x 15) 24 Mbit (32 Kw x 48) 24 Mbit (32 Kw x 48) 8 Mbit (4 Kw x 8 and 32 Kw x 15) PL032J Sectors 4 Mbit (4 Kw x 8 and 32 Kw x 7) 12 Mbit (32 Kw x 24) 12 Mbit (32 Kw x 24) 4 Mbit (4 Kw x 8 and 32 Kw x 7)
Bank 1A 1B 2A 2B
PL129J Sectors 16 Mbit (4 Kw x 8 and 32 Kw x 31) 48 Mbit (32 Kw x 96) 48 Mbit (32 Kw x 96) 16 Mbit (4 Kw x 8 and 32 Kw x 31)
CE# Control CE1# CE1# CE2# CE2#
1.1
Page Mode Features
The page size is 8 words. After initial page access is accomplished, the page mode operation provides fast read access speed of random locations within that page.
September 22, 2006 S29PL-J_00_A9
S29PL-J
7
Data
Sheet
(Advance
Information)
1.2
Standard Flash Memory Features
The device requires a single 3.0 volt power supply (2.7 V to 3.6 V) for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. The device is entirely command set compatible with the JEDEC 42.4 single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timing. Register contents serve as inputs to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices. Device programming occurs by executing the program command sequence. The Unlock Bypass mode facilitates faster programming times by requiring only two write cycles to program data instead of four. Device erasure occurs by executing the erase command sequence. The host system can detect whether a program or erase operation is complete by reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of sectors of memory. This can be achieved in-system or via programming equipment. The Erase Suspend/Erase Resume feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. True background erase can thus be achieved. If a read is needed from the Secured Silicon Sector area (One Time Program area) after an erase suspend, then the user must use the proper command sequence to enter and exit this region. The Program Suspend/Program Resume feature enables the user to hold the program operation to read data from any sector that is not selected for programming. If a read is needed from the Secured Silicon Sector area, Persistent Protection area, Dynamic Protection area, or the CFI area, after a program suspend, then the user must use the proper command sequence to enter and exit this region. The device offers two power-saving features. When addresses have been stable for a specified amount of time, the device enters the automatic sleep mode. The system can also place the device into the standby mode. Power consumption is greatly reduced in both these modes. The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunneling. The data is programmed using hot electron injection.
8
S29PL-J
S29PL-J_00_A9 September 22, 2006
Data
Sheet
(Advance
Information)
2.
Ordering Information
The order number (Valid Combination) is formed by a valid combinations of the following:
S29PL-J 55 BA W 00 0
Packing Type 0 = Tray 1 = Tube 2 = 7-inch Tape and Reel 3 = 13-inch Tape and Reel Model Number (Additional Ordering Options) 00 = 3.0V VIO, 80-ball 11 x 8 mm FBGA (VBG080) 01 = 1.8V VIO, 80-ball 11 x 8 mm FBGA (VBG080) 02 = 3.0V VIO, 64-ball 8 x 11.6 mm FBGA (VBH064) 12 = 3.0V VIO, 48-ball 8 x 6 mm FBGA (VBK048) 13 = 3.0V VIO, 56-ball 20 x 14 mm TSOP (TS056) 15 = 3.0V VIO, 56-ball 7 x 9 mm FBGA (VBU056) Temperature Range W = Wireless (-25C to +85C) I = Industrial (-40C to +85C) Package Type BA = Fine-Pitch Grid Array (FBGA) Lead (Pb)- free compliant BF = Fine-Pitch Grid Array (FBGA) Lead (Pb)-free TA = Thin Small Outline Package (TSOP) Standard Pinout Lead (Pb)-free compliant TF = Thin Small Outline Package (TSOP) Standard Pinout Lead (Pb)-free Clock Speed 55 = 55 ns (Contact factory for availability) 60 = 60 ns 65 = 65 ns 70 = 70 ns Device Number/Description 128 Megabit (8 M x 16-Bit), 64 Megabit (4 M x 16-Bit), 32 Megabit (2 M x 16-Bit) CMOS Flash Memory, Simultaneous-Read/Write, Page-Mode Flash Memory, 3.0 Volt-only Read, Program, and Erase
Valid Combinations to be Supported for this Device
128 Mb Products Based on 110 nm Floating Gate Technology Device Number/ Description S29PL127J Speed (ns) 55, 60, 65, 70 Package Type BA, BF, TA, TF Temperature Range W, I Additional Ordering Options 00, 01, 13 CE# Configuration Single CE#
64 Mb Products Based on 110 nm Floating Gate Technology Device Number/ Description S29PL064J Speed (ns) 55, 60, 70 Package Type BA, BF Temperature Range W, I Additional Ordering Options 12, 15
32 Mb Products Based on 110 nm Floating Gate Technology Device Number/ Description S29PL032J Speed (ns) 55, 60, 70 Package Type BA, BF Temperature Range W, I Additional Ordering Options 12, 15
September 22, 2006 S29PL-J_00_A9
S29PL-J
9
Data
Sheet
(Advance
Information)
Valid Combinations for BGA Packages Order Number (Note 1) PL129J, PL127J,PL064J, PL032J PL129J, PL127J Notes 1. Please contact the factory for PL129J availability. 2. Please contact the factory for availability. Speed (ns) 55, 60, 65, 70 65, 70 VIO Range 2.7-3.6 1.65-1.95
Valid Combinations for TSOP Packages Order Number S29PL127J Speed (ns) 55, 60, 70 VIO Range 2.7-3.6
3. Product Selector Guide
Part Number VCC,VIO = 2.7 V - 3.6 V Speed Option VCC = 2.7 V - 3.6 V, VCC = 1.65 V - 1.95 V (PL127J and PL129J only) S29PL032J/S29PL064J/S29PL0127J/S29PL129J 55 (See Note) -- 55 (See Note) 2 (See Note) 60 65 -- -- 70
--
--
65
70
--
Max Access Time, ns (tACC) Max CE# Access, ns (tCE) Max Page Access, ns (tPACC) Max OE# Access, ns (tOE) Note Contact factory for availability
60
25
65
70
70
25
25
30
30
10
S29PL-J
S29PL-J_00_A9 September 22, 2006
Data
Sheet
(Advance
Information)
4. Block Diagram
RY/BY# VCC VSS Sector Switches DQ15-DQ0
VIO
RESET# Erase Voltage Generator WE# State Control Command Register PGM Voltage Generator
Input/Output Buffers
CE# OE#
Chip Enable Output Enable Logic
Data Latch
Amax-A3
Address Latch
VCC Detector
Timer
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
A2-A0
Notes 1. RY/BY# is an open drain output. 2. Amax = A22 (PL127J), A21 (PL129J and PL064J), A20 (PL032J) 3. For PL129J there are two CE# (CE1# and CE2#)
September 22, 2006 S29PL-J_00_A9
S29PL-J
11
Data
Sheet
(Advance
Information)
5. Simultaneous Read/Write Block Diagram
VCC VSS OE#
Mux Amax-A0
Bank A Address
Bank A Y-gate X-Decoder
A22-A0
RY/BY#
Bank B Address
Bank B X-Decoder DQ15-DQ0
Amax-A0 RESET# WE# CE# WP#/ACC STATE CONTROL & COMMAND REGISTER Status
DQ15-DQ0
DQ15-DQ0 Control DQ15-DQ0 Mux
DQ0-DQ15 A22-A0
Bank C Address
X-Decoder Bank C Y-gate
X-Decoder Amax-A0 Mux
Note Amax = A22 (PL127J), A21 (PL064J), A20 (PL032J)
Bank D Address
Bank D
12
S29PL-J
S29PL-J_00_A9 September 22, 2006
DQ15-DQ0
Data
Sheet
(Advance
Information)
6. Simultaneous Read/Write Block Diagram (PL129J)
VCC VSS CE1#=L CE2#=H Mux A21-A0
Bank 1A Address
OE#
Bank 1A Y-gate X-Decoder
A21-A0
RY/BY#
Bank 1B Address
Bank 1B X-Decoder DQ15-DQ0
A21-A0 RESET# WE# CE1# CE2# WP#/ACC STATE CONTROL & COMMAND REGISTER CE1#=H CE2#=L DQ0-DQ15 A21-A0
Bank 2A Address
Status DQ15-DQ0 Control DQ15-DQ0 Mux
X-Decoder Bank 2A Y-gate
X-Decoder A21-A0 Mux
Bank 2B Address
Bank 2B
Note Amax = A21 (PL129J)
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7.
7.1
Connection Diagrams
Special Package Handling Instructions
TSOP, BGA, PDIP, SSOP, and PLCC Packages
Special handling is required for Flash Memory products in molded packages. The package and/or data integrity may be compromised if the package body is exposed to temperatures above 150C for prolonged periods of time.
7.1.1
7.1.2
FBGA Packages
Special handling is required for Flash Memory products in FBGA packages. Flash memory devices in FBGA packages may be damaged if exposed to ultrasonic cleaning methods. The package and/or data integrity may be compromised if the package body is exposed to temperatures above 150C for prolonged periods of time.
7.2
80-Ball Fine-Pitch BGA--PL127J
Figure 7.1 80-Ball Fine-Pitch BGA, Top View, Balls Facing Down--PL127J
A8 NC A7 NC
B8 NC B7 NC
C8 NC C7 A13 C6 A9 C5 WE# C4
D8 A22 D7 A12 D6 A8 D5 RESET# D4
E8 NC E7 A14 E6 A10 E5 A21 E4 A18 E3 A6 E2 A2 E1 NC
F8 VIO F7 A15 F6 A11 F5 A19 F4 A20 F3 A5 F2 A1 F1 NC
G8 VSS G7 A16 G6 DQ7 G5 DQ5 G4 DQ2 G3 DQ0 G2 A0 G1 NC
H8 NC H7 NC H6 DQ14 H5 DQ12 H4 DQ10 H3 DQ8 H2 CE# H1 VIO
J8 NC J7 DQ15 J6 DQ13 J5 VCC J4 DQ11 J3 DQ9 J2 OE# J1 NC
K8 NC K7 VSS K6 DQ6 K5 DQ4 K4 DQ3 K3 DQ1 K2 VSS K1 NC
L8 NC L7 NC
M8 NC M7 NC
RY/BY# WP#/ACC C3 A7 A2 NC A1 NC B2 NC B1 NC C2 A3 C1 NC D3 A17 D2 A4 D1 NC
L2 NC L1 NC
M2 NC M1 NC
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7.3
64-Ball Fine-Pitch BGA--MCP Compatible--PL127J
Figure 7.2 64-Ball Fine-Pitch BGA, MCP Compatible, Top View, Balls Facing Down--PL127J
A1 NC B5 RFU C3 A7 D2 A3 E2 A2 F2 A1 G2 A0 H2 CE#f1 J2 RFU D3 A6 E3 A5 F3 A4 G3 VSS H3 OE# J3 DQ0 K3 DQ8 C4 RFU D4 RFU E4 A18 F4 A17 G4 DQ1 H4 DQ9 J4 DQ10 K4 DQ2 H5 DQ3 J5 VCCf K5 DQ11 L5 VCCf M1 NC H6 DQ4 J6 RFU K6 RFU L6 RFU M10 NC C5 B6 RFU C6 C7 A8 D7 A19 E7 A9 F7 A10 G7 DQ6 H7 DQ13 J7 DQ12 K7 DQ5 C8 A11 D8 A12 E8 A13 F8 A14 G8 RFU H8 DQ15 J8 DQ7 K8 DQ14 D9 A15 E9 A21 F9 A22 G9 A16 H9 RFU J9 VSS A10 NC
WP#/ACC WE# D5 D6
RESET# RFU E5 E6
RY/BY # A20
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7.4
48-Ball Fine-Pitch BGA, PL064J and PL032J
Figure 7.3 48-Ball Fine-Pitch BGA, Top View, Balls Facing Down--PL064J--PL032J: C4(A21)=NC
A6 A13 A5 A9 A4 WE# A3
B6 A12 B5 A8 B4 RESET# B3
C6 A14 C5 A10 C4 A21 C3 A18 C2 A6 C1 A2
D6 A15 D5 A11 D4 A19 D3 A20 D2 A5 D1 A1
E6 A16 E5 DQ7 E4 DQ5 E3 DQ2 E2 DQ0 E1 A0
F6 NC F5 DQ14 F4 DQ12 F3 DQ10 F2 DQ8 F1 CE#
G6 DQ15 G5 DQ13 G4 VCC G3 DQ11 G2 DQ9 G1 OE#
H6 VSS H5 DQ6 H4 DQ4 H3 DQ3 H2 DQ1 H1 VSS
RY/BY# WP#/ACC A2 A7 A1 A3 B2 A17 B1 A4
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7.5
56-Pin TSOP 20 x 14 mm
Figure 7.4 56-Pin TSOP 20 x 14 mm Configuration--PL127J
RESET# RY/BY# A0 A1 A2 A3 A4 A5 VCC DQ0 DQ1 DQ2 DQ3 VSSQ VCCQ DQ4 DQ5 DQ6 DQ7 VSS NC A6 A7 A8 A9 A10 A11 A12 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 WP#/ACC WE# NC A22 A21 A20 OE# NC CE# VSS DQ15 DQ14 DQ13 DQ12 VSSQ VCCQ DQ11 DQ10 DQ9 DQ8 VCC A19 A18 A17 A16 A15 A14 A13
For this family of products, a single multi-chip compatible package (TSOP) is offered for each density to allow both standalone and multi-chip qualification using a single, adaptable package. This new methodology allows package standardization resulting in faster development. The multi-chip compatible package includes all the pins required for standalone device operation and verification. In addition, extra pins are included for insertion of common data storage or logic devices to be used for multi-chip products. If a standalone device is required, the extra multi-chip specific pins are not connected and the standalone device operates normally. The multichip compatible package sizes were chosen to serve the largest number of combinations possible. There are only a few cases where a larger package size would be required to accommodate the multi-chip combination. This multi-chip compatible package set does not allow for direct package migration from the Am29BDS128H, Am29BDS128G, Am29BDS640G products, which use legacy standalone packages.
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7.6
56-Ball Fine-Pitch Ball Grid Array, PL064J and PL032J
Figure 7.5 56-ball Fine-Pitch BGA, Top View, Balls Facing Down,--PL064J and PL032J,
A2 A7 B1 A3 C1 A2 D1 A1 E1 A0 F1 CE1#f G1 RFU B2 A6 C2 A5 D2 A4 E2 VSS F2 OE# G2 DQ0 H2 DQ8
A3 RFU B3 RFU C3 A18 D3 A17 E3 DQ1 F3 DQ9 G3 DQ10 H3 DQ2
A4 WP/ACC B4 RST# C4 RY/BY#
A5 WE# B5 RFU C5 A20
A6 A8 B6 A19 C6 A9 D6 A10 E6 DQ6
A7 A11 B7 A12 C7 A13 D7 A14 E7 RFU F7 DQ15 G7 DQ7 H7 DQ14 B8 A15 C8 A21 D8 RFU E8 A16 F8 RFU G8 VSS
F4 DQ3 G4 VCCf H4 DQ11
F5 DQ4 G5 RFU H5 RFU
F6 DQ13 G6 DQ12 H6 DQ5
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8.
Pin Description
Amax-A0 DQ15-DQ0 CE# OE# WE# VSS NC Address bus 16-bit data inputs/outputs/float Chip Enable Inputs Output Enable Input Write Enable Device Ground Pin Not Connected Internally Ready/Busy output and open drain. RY/BY# When RY/BY#= VIH, the device is ready to accept read operations and commands. When RY/ BY#= VOL, the device is either executing an embedded algorithm or the device is executing a hardware reset operation. Write Protect/Acceleration Input. WP#/ACC When WP#/ACC= VIL, the highest and lowest two 4K-word sectors are write protected regardless of other sector protection configurations. When WP#/ACC= VIH, these sector are unprotected unless the DYB or PPB is programmed. When WP#/ACC= 12V, program and erase operations are accelerated. Input/Output Buffer Power Supply (1.65 V to 1.95 V (for PL127J and PL129J) or 2.7 V to 3.6 V (for all PLxxxJ devices)) Chip Power Supply (2.7 V to 3.6 V or 2.7 to 3.3 V) Hardware Reset Pin Chip Enable Inputs. CE1#, CE2# CE1# controls the 64Mb in Banks 1A and 1B. CE2# controls the 64 Mb in Banks 2A and 2B. (Only for PL129J)
Note Amax = A22 (PL127J), A21 (PL129J and PL064J), A20 (PL032J)
VIO VCC RESET#
9. Logic Symbol
max+1 Amax-A0 DQ15-DQ0 CE# OE# WE# WP#/ACC RESET# RY/BY# 16
VIO (VCCQ)
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10. Device Bus Operations
This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory location. The register is a latch used to store the commands, along with the address and data information needed to execute the command. The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. Table 10.1 lists the device bus operations, the inputs and control levels they require, and the resulting output. The following subsections describe each of these operations in further detail. Table 10.1 PL127J Device Bus Operations
Operation Read Write Standby Output Disable Reset Temporary Sector Unprotect (High Voltage) CE# L L VIO0.3 V L X X OE# L H X H X X WE# H L X H X X RESET# H H VIO 0.3 V H L VID WP#/ACC X X (Note 2) X (Note 2) X X X Addresses (Amax-A0) AIN AIN X X X AIN DQ15- DQ0 DOUT DIN High-Z High-Z High-Z DIN
Table 10.2 PL129J Device Bus Operations
Operation Read H L Write H Standby Output Disable Reset Temporary Sector Unprotect (High Voltage) VIO 0.3 V L X X L VIO 0.3 V L X X X H X X X H X X VIO 0.3 V H L VID L H H L H X (Note 2) X X X X CE1# L CE2# H L H H X AIN DOUT OE# WE# RESET# WP#/ACC Addresses (A21-A0) DQ15- DQ0
AIN X X X AIN
DIN High-Z High-Z High-Z DIN
Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 11.5-12.5 V, VHH = 8.5-9.5 V, X = Don't Care, SA = Sector Address, AIN = Address In, DIN = Data In, DOUT = Data Out Notes 1. The sector protect and sector unprotect functions may also be implemented via programming equipment. See High Voltage Sector Protection on page 48. 2. WP#/ACC must be high when writing to upper two and lower two sectors.
10.1
Requirements for Reading Array Data
To read array data from the outputs, the system must drive the OE# and appropriate CE# pins (For PL129J CE1#/CE2# pins) to VIL. In PL129J, CE1# and CE2# are the power control and select the lower (CE1#) or upper (CE2#) halves of the device. CE# is the power control. OE# is the output control and gates array data to the output pins. WE# should remain at VIH. The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the memory content occurs during the power transition. No command is necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. Each bank remains enabled for read access until the command register contents are altered. Refer to Table 21.3 on page 84 for timing specifications and to Figure 20.3 on page 74 for the timing diagram. ICC1 in the DC Characteristics table represents the active current specification for reading array data.
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10.1.1
Random Read (Non-Page Read)
Address access time (tACC) is equal to the delay from stable addresses to valid output data. The chip enable access time (tCE) is the delay from the stable addresses and stable CE# to valid data at the output inputs. The output enable access time is the delay from the falling edge of the OE# to valid data at the output inputs (assuming the addresses have been stable for at least tACC-tOE time).
10.1.2
Page Mode Read
The device is capable of fast page mode read and is compatible with the page mode Mask ROM read operation. This mode provides faster read access speed for random locations within a page. Address bits Amax-A3 select an 8 word page, and address bits A2-A0 select a specific word within that page. This is an asynchronous operation with the microprocessor supplying the specific word location. The random or initial page access is tACC or tCE and subsequent page read accesses (as long as the locations specified by the microprocessor falls within that page) is equivalent to tPACC. When CE# (CE1# and CE#2 in PL129J) is deasserted (=VIH), the reassertion of CE# (CE1# or CE#2 in PL129J) for subsequent access has access time of tACC or tCE. Here again, CE# (CE1# /CE#2 in PL129J)selects the device and OE# is the output control and should be used to gate data to the output inputs if the device is selected. Fast page mode accesses are obtained by keeping Amax-A3 constant and changing A2-A0 to select the specific word within that page. Table 10.3 Page Select
Word Word 0 Word 1 Word 2 Word 3 Word 4 Word 5 Word 6 Word 7 A2 0 0 0 0 1 1 1 1 A1 0 0 1 1 0 0 1 1 A0 0 1 0 1 0 1 0 1
10.2
Simultaneous Read/Write Operation
In addition to the conventional features (read, program, erase-suspend read, erase-suspend program, and program-suspend read), the device is capable of reading data from one bank of memory while a program or erase operation is in progress in another bank of memory (simultaneous operation). The bank can be selected by bank addresses (PL127J: A22-A20, PL129J and PL064J: A21-A19, PL032J: A20-A18) with zero latency. The simultaneous operation can execute multi-function mode in the same bank. Table 10.4 Bank Select
Bank Bank A Bank B Bank C Bank D PL127J: A22-A20, PL064J: A21-A19, PL032J: A20-A18 000 001, 010, 011 100, 101, 110 111
Bank Bank 1A Bank 1B Bank 2A Bank 2B
CE1# 0 0 1 1
CE2# 1 1 0 0
PL129J: A21-A20 00 01, 10, 11 00, 01, 10 11
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10.3
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive WE# and CE# (CE1# or CE#2 in PL129J) to VIL, and OE# to VIH. The device features an Unlock Bypass mode to facilitate faster programming. Once a bank enters the Unlock Bypass mode, only two write cycles are required to program a word, instead of four. Word Program Command Sequence on page 57 has details on programming data to the device using both standard and Unlock Bypass command sequences. An erase operation can erase one sector, multiple sectors, or the entire device. Table 10.4 on page 21 indicates the set of address space that each sector occupies. A "bank address" is the set of address bits required to uniquely select a bank. Similarly, a "sector address" refers to the address bits required to uniquely select a sector. Command Definitions on page 55 has details on erasing a sector or the entire chip, or suspending/resuming the erase operation. ICC2 in the DC Characteristics table represents the active current specification for the write mode. See the timing specification tables and timing diagrams in section Reset on page 75 for write operations.
10.3.1
Accelerated Program Operation
The device offers accelerated program operations through the ACC function. This function is primarily intended to allow faster manufacturing throughput at the factory. If the system asserts VHH on this pin, the device automatically enters the aforementioned Unlock Bypass mode, temporarily unprotects any protected sectors, and uses the higher voltage on the pin to reduce the time required for program operations. The system would use a two-cycle program command sequence as required by the Unlock Bypass mode. Removing VHH from the WP#/ACC pin returns the device to normal operation. Note that VHH must not be asserted on WP#/ACC for operations other than accelerated programming, or device damage may result. In addition, the WP#/ACC pin should be raised to VCC when not in use. That is, the WP#/ACC pin should not be left floating or unconnected; inconsistent behavior of the device may result.
10.3.2
Autoselect Functions
If the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal register (which is separate from the memory array) on DQ15-DQ0. Standard read cycle timings apply in this mode. Refer to the Table 10.9, Secured Silicon Sector Addresses on page 39 and Autoselect Command Sequence on page 56 for more information.
10.4
Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE# input. The device enters the CMOS standby mode when the CE# (CE1#,CE#2 in PL129J) and RESET# pins are both held at VIO 0.3 V. (Note that this is a more restricted voltage range than VIH.) If CE# (CE1#,CE#2 in PL129J) and RESET# are held at VIH, but not within VIO 0.3 V, the device will be in the standby mode, but the standby current will be greater. The device requires standard access time (tCE) for read access when the device is in either of these standby modes, before it is ready to read data. If the device is deselected during erasure or programming, the device draws active current until the operation is completed. ICC3 in DC Characteristics on page 71 represents the CMOS standby current specification.
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10.5
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this mode when addresses remain stable for tACC + 30 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output data is latched and always available to the system. Note that during automatic sleep mode, OE# must be at VIH before the device reduces current to the stated sleep mode specification. ICC5 in DC Characteristics on page 71 represents the automatic sleep mode current specification.
10.6
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading array data. When the RESET# pin is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tristates all output pins, and ignores all read/write commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity. Current is reduced for the duration of the RESET# pulse. When RESET# is held at VSS0.3 V, the device draws CMOS standby current (ICC4). If RESET# is held at VIL but not within VSS0.3 V, the standby current will be greater. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash memory, enabling the system to read the boot-up firmware from the Flash memory. If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a "0" (busy) until the internal reset operation is complete, which requires a time of tREADY (during Embedded Algorithms). The system can thus monitor RY/BY# to determine whether the reset operation is complete. If RESET# is asserted when a program or erase operation is not executing (RY/BY# pin is "1"), the reset operation is completed within a time of tREADY (not during Embedded Algorithms). The system can read data tRH after the RESET# pin returns to VIH. Refer to the tables in AC Characteristic on page 72 for RESET# parameters and to Figure 20.5 on page 75 for the timing diagram.
10.7
Output Disable Mode
When the OE# input is at VIH, output from the device is disabled. The output pins (except for RY/BY#) are placed in the highest Impedance state Table 10.5 PL127J Sector Architecture (Sheet 1 of 7)
Bank Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 Bank A SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 Sector Address (A22-A12) 00000000000 00000000001 00000000010 00000000011 00000000100 00000000101 00000000110 00000000111 00000001XXX 00000010XXX 00000011XXX 00000100XXX 00000101XXX 00000110XXX 00000111XXX 00001000XXX 00001001XXX Sector Size (Kwords) 4 4 4 4 4 4 4 4 32 32 32 32 32 32 32 32 32 Address Range (x16) 000000h-000FFFh 001000h-001FFFh 002000h-002FFFh 003000h-003FFFh 004000h-004FFFh 005000h-005FFFh 006000h-006FFFh 007000h-007FFFh 008000h-00FFFFh 010000h-017FFFh 018000h-01FFFFh 020000h-027FFFh 028000h-02FFFFh 030000h-037FFFh 038000h-03FFFFh 040000h-047FFFh 048000h-04FFFFh
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Table 10.5 PL127J Sector Architecture (Sheet 2 of 7)
Bank Sector SA17 SA18 SA19 SA20 SA21 SA22 SA23 SA24 SA25 SA26 Bank A SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34 SA35 SA36 SA37 SA38 SA39 SA40 SA41 SA42 SA43 SA44 SA45 SA46 SA47 SA48 SA49 SA50 Bank B SA51 SA52 SA53 SA54 SA55 SA56 SA57 SA58 SA59 SA60 SA61 SA62 SA63 SA64 SA65 Sector Address (A22-A12) 00001010XXX 00001011XXX 00001100XXX 00001101XXX 00001110XXX 00001111XXX 00010000XXX 00010001XXX 00010010XXX 00010011XXX 00010100XXX 00010101XXX 00010110XXX 00010111XXX 00011000XXX 00011001XXX 00011010XXX 00011011XXX 00011100XXX 00011101XXX 00011110XXX 00011111XXX 00100000XXX 00100001XXX 00100010XXX 00100011XXX 00100100XXX 00100101XXX 00100110XXX 00100111XXX 00101000XXX 00101001XXX 00101010XXX 00101011XXX 00101100XXX 00101101XXX 00101110XXX 00101111XXX 00110000XXX 00110001XXX 00110010XXX 00110011XXX 00110100XXX 00110101XXX 00110110XXX 00110111XXX 00111000XXX 00111001XXX 00111010XXX Sector Size (Kwords) 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 Address Range (x16) 050000h-057FFFh 058000h-05FFFFh 060000h-067FFFh 068000h-06FFFFh 070000h-077FFFh 078000h-07FFFFh 080000h-087FFFh 088000h-08FFFFh 090000h-097FFFh 098000h-09FFFFh 0A0000h-0A7FFFh 0A8000h-0AFFFFh 0B0000h-0B7FFFh 0B8000h-0BFFFFh 0C0000h-0C7FFFh 0C8000h-0CFFFFh 0D0000h-0D7FFFh 0D8000h-0DFFFFh 0E0000h-0E7FFFh 0E8000h-0EFFFFh 0F0000h-0F7FFFh 0F8000h-0FFFFFh 100000h-107FFFh 108000h-10FFFFh 110000h-117FFFh 118000h-11FFFFh 120000h-127FFFh 128000h-12FFFFh 130000h-137FFFh 138000h-13FFFFh 140000h-147FFFh 148000h-14FFFFh 150000h-157FFFh 158000h-15FFFFh 160000h-167FFFh 168000h-16FFFFh 170000h-177FFFh 178000h-17FFFFh 180000h-187FFFh 188000h-18FFFFh 190000h-197FFFh 198000h-19FFFFh 1A0000h-1A7FFFh 1A8000h-1AFFFFh 1B0000h-1B7FFFh 1B8000h-1BFFFFh 1C0000h-1C7FFFh 1C8000h-1CFFFFh 1D0000h-1D7FFFh
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Table 10.5 PL127J Sector Architecture (Sheet 3 of 7)
Bank Sector SA66 SA67 SA68 SA69 SA70 SA71 SA72 SA73 SA74 SA75 SA76 SA77 SA78 SA79 SA80 SA81 SA82 SA83 SA84 SA85 SA86 SA87 SA88 Bank B SA89 SA90 SA91 SA92 SA93 SA94 SA95 SA96 SA97 SA98 SA99 SA100 SA101 SA102 SA103 SA104 SA105 SA106 SA107 SA108 SA109 SA110 SA111 SA112 SA113 SA114 Sector Address (A22-A12) 00111011XXX 00111100XXX 00111101XXX 00111110XXX 00111111XXX 01000000XXX 01000001XXX 01000010XXX 01000011XXX 01000100XXX 01000101XXX 01000110XXX 01000111XXX 01001000XXX 01001001XXX 01001010XXX 01001011XXX 01001100XXX 01001101XXX 01001110XXX 01001111XXX 01010000XXX 01010001XXX 01010010XXX 01010011XXX 01010100XXX 01010101XXX 01010110XXX 01010111XXX 01011000XXX 01011001XXX 01011010XXX 01011011XXX 01011100XXX 01011101XXX 01011110XXX 01011111XXX 01100000XXX 01100001XXX 01100010XXX 01100011XXX 01100100XXX 01100101XXX 01100110XXX 01100111XXX 01101000XXX 01101001XXX 01101010XXX 01101011XXX Sector Size (Kwords) 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 Address Range (x16) 1D8000h-1DFFFFh 1E0000h-1E7FFFh 1E8000h-1EFFFFh 1F0000h-1F7FFFh 1F8000h-1FFFFFh 200000h-207FFFh 208000h-20FFFFh 210000h-217FFFh 218000h-21FFFFh 220000h-227FFFh 228000h-22FFFFh 230000h-237FFFh 238000h-23FFFFh 240000h-247FFFh 248000h-24FFFFh 250000h-257FFFh 258000h-25FFFFh 260000h-267FFFh 268000h-26FFFFh 270000h-277FFFh 278000h-27FFFFh 280000h-287FFFh 288000h-28FFFFh 290000h-297FFFh 298000h-29FFFFh 2A0000h-2A7FFFh 2A8000h-2AFFFFh 2B0000h-2B7FFFh 2B8000h-2BFFFFh 2C0000h-2C7FFFh 2C8000h-2CFFFFh 2D0000h-2D7FFFh 2D8000h-2DFFFFh 2E0000h-2E7FFFh 2E8000h-2EFFFFh 2F0000h-2F7FFFh 2F8000h-2FFFFFh 300000h-307FFFh 308000h-30FFFFh 310000h-317FFFh 318000h-31FFFFh 320000h-327FFFh 328000h-32FFFFh 330000h-337FFFh 338000h-33FFFFh 340000h-347FFFh 348000h-34FFFFh 350000h-357FFFh 358000h-35FFFFh
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Table 10.5 PL127J Sector Architecture (Sheet 4 of 7)
Bank Sector SA115 SA116 SA117 SA118 SA119 SA120 SA121 SA122 SA123 Bank B SA124 SA125 SA126 SA127 SA128 SA129 SA130 SA131 SA132 SA133 SA134 SA135 SA136 SA137 SA138 SA139 SA140 SA141 SA142 SA143 SA144 SA145 SA146 SA147 Bank C SA148 SA149 SA150 SA151 SA152 SA153 SA154 SA155 SA156 SA157 SA158 SA159 SA160 SA161 SA162 SA163 Sector Address (A22-A12) 01101100XXX 01101101XXX 01101110XXX 01101111XXX 01110000XXX 01110001XXX 01110010XXX 01110011XXX 01110100XXX 01110101XXX 01110110XXX 01110111XXX 01111000XXX 01111001XXX 01111010XXX 01111011XXX 01111100XXX 01111101XXX 01111110XXX 01111111XXX 10000000XXX 10000001XXX 10000010XXX 10000011XXX 10000100XXX 10000101XXX 10000110XXX 10000111XXX 10001000XXX 10001001XXX 10001010XXX 10001011XXX 10001100XXX 10001101XXX 10001110XXX 10001111XXX 10010000XXX 10010001XXX 10010010XXX 10010011XXX 10010100XXX 10010101XXX 10010110XXX 10010111XXX 10011000XXX 10011001XXX 10011010XXX 10011011XXX 10011100XXX Sector Size (Kwords) 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 Address Range (x16) 360000h-367FFFh 368000h-36FFFFh 370000h-377FFFh 378000h-37FFFFh 380000h-387FFFh 388000h-38FFFFh 390000h-397FFFh 398000h-39FFFFh 3A0000h-3A7FFFh 3A8000h-3AFFFFh 3B0000h-3B7FFFh 3B8000h-3BFFFFh 3C0000h-3C7FFFh 3C8000h-3CFFFFh 3D0000h-3D7FFFh 3D8000h-3DFFFFh 3E0000h-3E7FFFh 3E8000h-3EFFFFh 3F0000h-3F7FFFh 3F8000h-3FFFFFh 400000h-407FFFh 408000h-40FFFFh 410000h-417FFFh 418000h-41FFFFh 420000h-427FFFh 428000h-42FFFFh 430000h-437FFFh 438000h-43FFFFh 440000h-447FFFh 448000h-44FFFFh 450000h-457FFFh 458000h-45FFFFh 460000h-467FFFh 468000h-46FFFFh 470000h-477FFFh 478000h-47FFFFh 480000h-487FFFh 488000h-48FFFFh 490000h-497FFFh 498000h-49FFFFh 4A0000h-4A7FFFh 4A8000h-4AFFFFh 4B0000h-4B7FFFh 4B8000h-4BFFFFh 4C0000h-4C7FFFh 4C8000h-4CFFFFh 4D0000h-4D7FFFh 4D8000h-4DFFFFh 4E0000h-4E7FFFh
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Table 10.5 PL127J Sector Architecture (Sheet 5 of 7)
Bank Sector SA164 SA165 SA166 SA167 SA168 SA169 SA170 SA171 SA172 SA173 SA174 SA175 SA176 SA177 SA178 SA179 SA180 SA181 SA182 SA183 SA184 SA185 SA186 Bank C SA187 SA188 SA189 SA190 SA191 SA192 SA193 SA194 SA195 SA196 SA197 SA198 SA199 SA200 SA201 SA202 SA203 SA204 SA205 SA206 SA207 SA208 SA209 SA210 SA211 SA212 Sector Address (A22-A12) 10011101XXX 10011110XXX 10011111XXX 10100000XXX 10100001XXX 10100010XXX 10100011XXX 10100100XXX 10100101XXX 10100110XXX 10100111XXX 10101000XXX 10101001XXX 10101010XXX 10101011XXX 10101100XXX 10101101XXX 10101110XXX 10101111XXX 10110000XXX 10110001XXX 10110010XXX 10110011XXX 10110100XXX 10110101XXX 10110110XXX 10110111XXX 10111000XXX 10111001XXX 10111010XXX 10111011XXX 10111100XXX 10111101XXX 10111110XXX 10111111XXX 11000000XXX 11000001XXX 11000010XXX 11000011XXX 11000100XXX 11000101XXX 11000110XXX 11000111XXX 11001000XXX 11001001XXX 11001010XXX 11001011XXX 11001100XXX 11001101XXX Sector Size (Kwords) 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 Address Range (x16) 4E8000h-4EFFFFh 4F0000h-4F7FFFh 4F8000h-4FFFFFh 500000h-507FFFh 508000h-50FFFFh 510000h-517FFFh 518000h-51FFFFh 520000h-527FFFh 528000h-52FFFFh 530000h-537FFFh 538000h-53FFFFh 540000h-547FFFh 548000h-54FFFFh 550000h-557FFFh 558000h-15FFFFh 560000h-567FFFh 568000h-56FFFFh 570000h-577FFFh 578000h-57FFFFh 580000h-587FFFh 588000h-58FFFFh 590000h-597FFFh 598000h-59FFFFh 5A0000h-5A7FFFh 5A8000h-5AFFFFh 5B0000h-5B7FFFh 5B8000h-5BFFFFh 5C0000h-5C7FFFh 5C8000h-5CFFFFh 5D0000h-5D7FFFh 5D8000h-5DFFFFh 5E0000h-5E7FFFh 5E8000h-5EFFFFh 5F0000h-5F7FFFh 5F8000h-5FFFFFh 600000h-607FFFh 608000h-60FFFFh 610000h-617FFFh 618000h-61FFFFh 620000h-627FFFh 628000h-62FFFFh 630000h-637FFFh 638000h-63FFFFh 640000h-647FFFh 648000h-64FFFFh 650000h-657FFFh 658000h-65FFFFh 660000h-667FFFh 668000h-66FFFFh
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Table 10.5 PL127J Sector Architecture (Sheet 6 of 7)
Bank Sector SA213 SA214 SA215 SA216 SA217 SA218 SA219 SA220 Bank C SA221 SA222 SA223 SA224 SA225 SA226 SA227 SA228 SA229 SA230 SA231 SA232 SA233 SA234 SA235 SA236 SA237 SA238 SA239 SA240 SA241 SA242 SA243 SA244 Bank D SA245 SA246 SA247 SA248 SA249 SA250 SA251 SA252 SA253 SA254 SA255 SA256 SA257 SA258 SA259 SA260 SA261 Sector Address (A22-A12) 11001110XXX 11001111XXX 11010000XXX 11010001XXX 11010010XXX 11010011XXX 11010100XXX 11010101XXX 11010110XXX 11010111XXX 11011000XXX 11011001XXX 11011010XXX 11011011XXX 11011100XXX 11011101XXX 11011110XXX 11011111XXX 11100000XXX 11100001XXX 11100010XXX 11100011XXX 11100100XXX 11100101XXX 11100110XXX 11100111XXX 11101000XXX 11101001XXX 11101010XXX 11101011XXX 11101100XXX 11101101XXX 11101110XXX 11101111XXX 11110000XXX 11110001XXX 11110010XXX 11110011XXX 11110100XXX 11110101XXX 11110110XXX 11110111XXX 11111000XXX 11111001XXX 11111010XXX 11111011XXX 11111100XXX 11111101XXX 11111110XXX Sector Size (Kwords) 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 Address Range (x16) 670000h-677FFFh 678000h-67FFFFh 680000h-687FFFh 688000h-68FFFFh 690000h-697FFFh 698000h-69FFFFh 6A0000h-6A7FFFh 6A8000h-6AFFFFh 6B0000h-6B7FFFh 6B8000h-6BFFFFh 6C0000h-6C7FFFh 6C8000h-6CFFFFh 6D0000h-6D7FFFh 6D8000h-6DFFFFh 6E0000h-6E7FFFh 6E8000h-6EFFFFh 6F0000h-6F7FFFh 6F8000h-6FFFFFh 700000h-707FFFh 708000h-70FFFFh 710000h-717FFFh 718000h-71FFFFh 720000h-727FFFh 728000h-72FFFFh 730000h-737FFFh 738000h-73FFFFh 740000h-747FFFh 748000h-74FFFFh 750000h-757FFFh 758000h-75FFFFh 760000h-767FFFh 768000h-76FFFFh 770000h-777FFFh 778000h-77FFFFh 780000h-787FFFh 788000h-78FFFFh 790000h-797FFFh 798000h-79FFFFh 7A0000h-7A7FFFh 7A8000h-7AFFFFh 7B0000h-7B7FFFh 7B8000h-7BFFFFh 7C0000h-7C7FFFh 7C8000h-7CFFFFh 7D0000h-7D7FFFh 7D8000h-7DFFFFh 7E0000h-7E7FFFh 7E8000h-7EFFFFh 7F0000h-7F7FFFh
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Table 10.5 PL127J Sector Architecture (Sheet 7 of 7)
Bank Sector SA262 SA263 SA264 Bank D SA265 SA266 SA267 SA268 SA269 Sector Address (A22-A12) 11111111000 11111111001 11111111010 11111111011 11111111100 11111111101 11111111110 11111111111 Sector Size (Kwords) 4 4 4 4 4 4 4 4 Address Range (x16) 7F8000h-7F8FFFh 7F9000h-7F9FFFh 7FA000h-7FAFFFh 7FB000h-7FBFFFh 7FC000h-7FCFFFh 7FD000h-7FDFFFh 7FE000h-7FEFFFh 7FF000h-7FFFFFh
Table 10.6 PL064J Sector Architecture (Sheet 1 of 4)
Bank Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 Bank A SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 SA19 SA20 SA21 SA22 SA23 SA24 SA25 SA26 SA27 SA28 Bank B SA29 SA30 SA31 SA32 SA33 SA34 SA35 SA36 Sector Address (A22-A12) 0000000000 0000000001 0000000010 0000000011 0000000100 0000000101 0000000110 0000000111 0000001XXX 0000010XXX 0000011XXX 0000100XXX 0000101XXX 0000110XXX 0000111XXX 0001000XXX 0001001XXX 0001010XXX 0001011XXX 0001100XXX 0001101XXX 0001110XXX 0001111XXX 0010000XXX 0010001XXX 0010010XXX 0010011XXX 0010100XXX 0010101XXX 0010110XXX 0010111XXX 0011000XXX 0011001XXX 0011010XXX 0011011XXX 0011100XXX 0011101XXX Sector Size (Kwords) 4 4 4 4 4 4 4 4 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 Address Range (x16) 000000h-000FFFh 001000h-001FFFh 002000h-002FFFh 003000h-003FFFh 004000h-004FFFh 005000h-005FFFh 006000h-006FFFh 007000h-007FFFh 008000h-00FFFFh 010000h-017FFFh 018000h-01FFFFh 020000h-027FFFh 028000h-02FFFFh 030000h-037FFFh 038000h-03FFFFh 040000h-047FFFh 048000h-04FFFFh 050000h-057FFFh 058000h-05FFFFh 060000h-067FFFh 068000h-06FFFFh 070000h-077FFFh 078000h-07FFFFh 080000h-087FFFh 088000h-08FFFFh 090000h-097FFFh 098000h-09FFFFh 0A0000h-0A7FFFh 0A8000h-0AFFFFh 0B0000h-0B7FFFh 0B8000h-0BFFFFh 0C0000h-0C7FFFh 0C8000h-0CFFFFh 0D0000h-0D7FFFh 0D8000h-0DFFFFh 0E0000h-0E7FFFh 0E8000h-0EFFFFh
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Table 10.6 PL064J Sector Architecture (Sheet 2 of 4)
Bank Sector SA37 SA38 SA39 SA40 SA41 SA42 SA43 SA44 SA45 SA46 SA47 SA48 SA49 SA50 SA51 SA52 Bank B SA53 SA54 SA55 SA56 SA57 SA58 SA59 SA60 SA61 SA62 SA63 SA64 SA65 SA66 SA67 SA68 SA69 SA70 SA71 SA72 SA73 SA74 SA75 SA76 Bank C SA77 SA78 SA79 SA80 SA81 SA82 SA83 SA84 SA85 Sector Address (A22-A12) 0011110XXX 0011111XXX 0100000XXX 0100001XXX 0100010XXX 0100011XXX 0100100XXX 0100101XXX 0100110XXX 0100111XXX 0101000XXX 0101001XXX 0101010XXX 0101011XXX 0101100XXX 0101101XXX 0101110XXX 0101111XXX 0110000XXX 0110001XXX 0110010XXX 0110011XXX 0110100XXX 0110101XXX 0110110XXX 0110111XXX 0111000XXX 0111001XXX 0111010XXX 0111011XXX 0111100XXX 0111101XXX 0111110XXX 0111111XXX 1000000XXX 1000001XXX 1000010XXX 1000011XXX 1000100XXX 1000101XXX 1000110XXX 1000111XXX 1001000XXX 1001001XXX 1001010XXX 1001011XXX 1001100XXX 1001101XXX 1001110XXX Sector Size (Kwords) 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 Address Range (x16) 0F0000h-0F7FFFh 0F8000h-0FFFFFh 100000h-107FFFh 108000h-10FFFFh 110000h-117FFFh 118000h-11FFFFh 120000h-127FFFh 128000h-12FFFFh 130000h-137FFFh 138000h-13FFFFh 140000h-147FFFh 148000h-14FFFFh 150000h-157FFFh 158000h-15FFFFh 160000h-167FFFh 168000h-16FFFFh 170000h-177FFFh 178000h-17FFFFh 180000h-187FFFh 188000h-18FFFFh 190000h-197FFFh 198000h-19FFFFh 1A0000h-1A7FFFh 1A8000h-1AFFFFh 1B0000h-1B7FFFh 1B8000h-1BFFFFh 1C0000h-1C7FFFh 1C8000h-1CFFFFh 1D0000h-1D7FFFh 1D8000h-1DFFFFh 1E0000h-1E7FFFh 1E8000h-1EFFFFh 1F0000h-1F7FFFh 1F8000h-1FFFFFh 200000h-207FFFh 208000h-20FFFFh 210000h-217FFFh 218000h-21FFFFh 220000h-227FFFh 228000h-22FFFFh 230000h-237FFFh 238000h-23FFFFh 240000h-247FFFh 248000h-24FFFFh 250000h-257FFFh 258000h-25FFFFh 260000h-267FFFh 268000h-26FFFFh 270000h-277FFFh
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Table 10.6 PL064J Sector Architecture (Sheet 3 of 4)
Bank Sector SA86 SA87 SA88 SA89 SA90 SA91 SA92 SA93 SA94 SA95 SA96 SA97 SA98 SA99 SA100 Bank C SA101 SA102 SA103 SA104 SA105 SA106 SA107 SA108 SA109 SA110 SA111 SA112 SA113 SA114 SA115 SA116 SA117 SA118 SA119 SA120 SA121 SA122 SA123 SA124 SA125 Bank D SA126 SA127 SA128 SA129 SA130 SA131 SA132 SA133 SA134 Sector Address (A22-A12) 1001111XXX 1010000XXX 1010001XXX 1010010XXX 1010011XXX 1010100XXX 1010101XXX 1010110XXX 1010111XXX 1011000XXX 1011001XXX 1011010XXX 1011011XXX 1011100XXX 1011101XXX 1011110XXX 1011111XXX 1100000XXX 1100001XXX 1100010XXX 1100011XXX 1100100XXX 1100101XXX 1100110XXX 1100111XXX 1101000XXX 1101001XXX 1101010XXX 1101011XXX 1101100XXX 1101101XXX 1101110XXX 1101111XXX 1110000XXX 1110001XXX 1110010XXX 1110011XXX 1110100XXX 1110101XXX 1110110XXX 1110111XXX 1111000XXX 1111001XXX 1111010XXX 1111011XXX 1111100XXX 1111101XXX 1111110XXX 1111111000 Sector Size (Kwords) 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 4 Address Range (x16) 278000h-27FFFFh 280000h-287FFFh 288000h-28FFFFh 290000h-297FFFh 298000h-29FFFFh 2A0000h-2A7FFFh 2A8000h-2AFFFFh 2B0000h-2B7FFFh 2B8000h-2BFFFFh 2C0000h-2C7FFFh 2C8000h-2CFFFFh 2D0000h-2D7FFFh 2D8000h-2DFFFFh 2E0000h-2E7FFFh 2E8000h-2EFFFFh 2F0000h-2F7FFFh 2F8000h-2FFFFFh 300000h-307FFFh 308000h-30FFFFh 310000h-317FFFh 318000h-31FFFFh 320000h-327FFFh 328000h-32FFFFh 330000h-337FFFh 338000h-33FFFFh 340000h-347FFFh 348000h-34FFFFh 350000h-357FFFh 358000h-35FFFFh 360000h-367FFFh 368000h-36FFFFh 370000h-377FFFh 378000h-37FFFFh 380000h-387FFFh 388000h-38FFFFh 390000h-397FFFh 398000h-39FFFFh 3A0000h-3A7FFFh 3A8000h-3AFFFFh 3B0000h-3B7FFFh 3B8000h-3BFFFFh 3C0000h-3C7FFFh 3C8000h-3CFFFFh 3D0000h-3D7FFFh 3D8000h-3DFFFFh 3E0000h-3E7FFFh 3E8000h-3EFFFFh 3F0000h-3F7FFFh 3F8000h-3F8FFFh
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Table 10.6 PL064J Sector Architecture (Sheet 4 of 4)
Bank Sector SA135 SA136 Bank D SA137 SA138 SA139 SA140 SA141 Sector Address (A22-A12) 1111111001 1111111010 1111111011 1111111100 1111111101 1111111110 1111111111 Sector Size (Kwords) 4 4 4 4 4 4 4 Address Range (x16) 3F9000h-3F9FFFh 3FA000h-3FAFFFh 3FB000h-3FBFFFh 3FC000h-3FCFFFh 3FD000h-3FDFFFh 3FE000h-3FEFFFh 3FF000h-3FFFFFh
Table 10.7 PL032J Sector Architecture (Sheet 1 of 2)
Bank Sector SA0 SA1 SA2 SA3 SA4 SA5 Bank A SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 SA19 SA20 SA21 SA22 SA23 SA24 Bank B SA25 SA26 SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34 SA35 SA36 SA37 Sector Address (A22-A12) 000000000 000000001 000000010 000000011 000000100 000000101 000000110 000000111 000001XXX 000010XXX 000011XXX 000100XXX 000101XXX 000110XXX 000111XXX 001000XXX 001001XXX 001010XXX 001011XXX 001100XXX 001101XXX 001110XXX 001111XXX 010000XXX 010001XXX 010010XXX 010011XXX 010100XXX 010101XXX 010110XXX 010111XXX 011000XXX 011001XXX 011010XXX 011011XXX 011100XXX 011101XXX 011110XXX Sector Size (Kwords) 4 4 4 4 4 4 4 4 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 Address Range (x16) 000000h-000FFFh 001000h-001FFFh 002000h-002FFFh 003000h-003FFFh 004000h-004FFFh 005000h-005FFFh 006000h-006FFFh 007000h-007FFFh 008000h-00FFFFh 010000h-017FFFh 018000h-01FFFFh 020000h-027FFFh 028000h-02FFFFh 030000h-037FFFh 038000h-03FFFFh 040000h-047FFFh 048000h-04FFFFh 050000h-057FFFh 058000h-05FFFFh 060000h-067FFFh 068000h-06FFFFh 070000h-077FFFh 078000h-07FFFFh 080000h-087FFFh 088000h-08FFFFh 090000h-097FFFh 098000h-09FFFFh 0A0000h-0A7FFFh 0A8000h-0AFFFFh 0B0000h-0B7FFFh 0B8000h-0BFFFFh 0C0000h-0C7FFFh 0C8000h-0CFFFFh 0D0000h-0D7FFFh 0D8000h-0DFFFFh 0E0000h-0E7FFFh 0E8000h-0EFFFFh 0F0000h-0F7FFFh
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Table 10.7 PL032J Sector Architecture (Sheet 2 of 2)
Bank Bank B Sector SA38 SA39 SA40 SA41 SA42 SA43 SA44 SA45 SA46 SA47 SA48 SA49 Bank C SA50 SA51 SA52 SA53 SA54 SA55 SA56 SA57 SA58 SA59 SA60 SA61 SA62 SA63 SA64 SA65 SA66 SA67 SA68 Bank D SA69 SA70 SA71 SA72 SA73 SA74 SA75 SA76 SA77 Sector Address (A22-A12) 011111XXX 100000XXX 100001XXX 100010XXX 100011XXX 100100XXX 100101XXX 100110XXX 100111XXX 101000XXX 101001XXX 101010XXX 101011XXX 101100XXX 101101XXX 101110XXX 101111XXX 110000XXX 110001XXX 110010XXX 110011XXX 110100XXX 110101XXX 110110XXX 110111XXX 111000XXX 111001XXX 111010XXX 111011XXX 111100XXX 111101XXX 111110XXX 111111000 111111001 111111010 111111011 111111100 111111101 111111110 111111111 Sector Size (Kwords) 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 4 4 4 4 4 4 4 4 Address Range (x16) 0F8000h-0FFFFFh 100000h-107FFFh 108000h-10FFFFh 110000h-117FFFh 118000h-11FFFFh 120000h-127FFFh 128000h-12FFFFh 130000h-137FFFh 138000h-13FFFFh 140000h-147FFFh 148000h-14FFFFh 150000h-157FFFh 158000h-15FFFFh 160000h-167FFFh 168000h-16FFFFh 170000h-177FFFh 178000h-17FFFFh 180000h-187FFFh 188000h-18FFFFh 190000h-197FFFh 198000h-19FFFFh 1A0000h-1A7FFFh 1A8000h-1AFFFFh 1B0000h-1B7FFFh 1B8000h-1BFFFFh 1C0000h-1C7FFFh 1C8000h-1CFFFFh 1D0000h-1D7FFFh 1D8000h-1DFFFFh 1E0000h-1E7FFFh 1E8000h-1EFFFFh 1F0000h-1F7FFFh 1F8000h-1F8FFFh 1F9000h-1F9FFFh 1FA000h-1FAFFFh 1FB000h-1FBFFFh 1FC000h-1FCFFFh 1FD000h-1FDFFFh 1FE000h-1FEFFFh 1FF000h-1FFFFFh
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Table 10.8 S29PL129J Sector Architecture (Sheet 1 of 6)
Bank Sector SA1-0 SA1-1 SA1-2 SA1-3 SA1-4 SA1-5 SA1-6 SA1-7 SA1-8 SA1-9 SA1-10 SA1-11 SA1-12 SA1-13 SA1-14 SA1-15 SA1-16 SA1-17 Bank 1A SA1-18 SA1-19 SA1-20 SA1-21 SA1-22 SA1-23 SA1-24 SA1-25 SA1-26 SA1-27 SA1-28 SA1-29 SA1-30 SA1-31 SA1-32 SA1-33 SA1-34 SA1-35 SA1-36 SA1-37 SA1-38 SA1-39 SA1-40 SA1-41 Bank 1B SA1-42 SA1-43 SA1-44 SA1-45 SA1-46 SA1-47 CE1# 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 CE2# 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Sector Address (A21-A12) 0000000000 0000000001 0000000010 0000000011 0000000100 0000000101 0000000110 0000000111 0000001XXX 0000010XXX 0000011XXX 0000100XXX 0000101XXX 0000110XXX 0000111XXX 0001000XXX 0001001XXX 0001010XXX 0001011XXX 0001100XXX 0001101XXX 0001110XXX 0001111XXX 0010000XXX 0010001XXX 0010010XXX 0010011XXX 0010100XXX 0010101XXX 0010110XXX 0010111XXX 0011000XXX 0011001XXX 0011010XXX 0011011XXX 0011100XXX 0011101XXX 0011110XXX 0011111XXX 0100000XXX 0100001XXX 0100010XXX 0100011XXX 0100100XXX 0100101XXX 0100110XXX 0100111XXX 0101000XXX Sector Size (Kwords) 4 4 4 4 4 4 4 4 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 Address Range (x16) 000000h-000FFFh 001000h-001FFFh 002000h-002FFFh 003000h-003FFFh 004000h-004FFFh 005000h-005FFFh 006000h-006FFFh 007000h-007FFFh 008000h-00FFFFh 010000h-017FFFh 018000h-01FFFFh 020000h-027FFFh 028000h-02FFFFh 030000h-037FFFh 038000h-03FFFFh 040000h-047FFFh 048000h-04FFFFh 050000h-057FFFh 058000h-05FFFFh 060000h-067FFFh 068000h-06FFFFh 070000h-077FFFh 078000h-07FFFFh 080000h-087FFFh 088000h-08FFFFh 090000h-097FFFh 098000h-09FFFFh 0A0000h-0A7FFFh 0A8000h-0AFFFFh 0B0000h-0B7FFFh 0B8000h-0BFFFFh 0C0000h-0C7FFFh 0C8000h-0CFFFFh 0D0000h-0D7FFFh 0D8000h-0DFFFFh 0E0000h-0E7FFFh 0E8000h-0EFFFFh 0F0000h-0F7FFFh 0F8000h-0FFFFFh 100000h-107FFFh 108000h-10FFFFh 110000h-117FFFh 118000h-11FFFFh 120000h-127FFFh 128000h-12FFFFh 130000h-137FFFh 138000h-13FFFFh 140000h-147FFFh
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Information)
Table 10.8 S29PL129J Sector Architecture (Sheet 2 of 6)
Bank Sector SA1-48 SA1-49 SA1-50 SA1-51 SA1-52 SA1-53 SA1-54 SA1-55 SA1-56 SA1-57 SA1-58 SA1-59 SA1-60 SA1-61 SA1-62 SA1-63 SA1-64 SA1-65 SA1-66 SA1-67 SA1-68 SA1-69 SA1-70 Bank 1B SA1-71 SA1-72 SA1-73 SA1-74 SA1-75 SA1-76 SA1-77 SA1-78 SA1-79 SA1-80 SA1-81 SA1-82 SA1-83 SA1-84 SA1-85 SA1-86 SA1-87 SA1-88 SA1-89 SA1-90 SA1-91 SA1-92 SA1-93 SA1-94 SA1-95 SA1-96 CE1# 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 CE2# 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Sector Address (A21-A12) 0101001XXX 0101010XXX 0101011XXX 0101100XXX 0101101XXX 0101110XXX 0101111XXX 0110000XXX 0110001XXX 0110010XXX 0110011XXX 0110100XXX 0110101XXX 0110110XXX 0110111XXX 0111000XXX 0111001XXX 0111010XXX 0111011XXX 0111100XXX 0111101XXX 0111110XXX 0111111XXX 1000000XXX 1000001XXX 1000010XXX 1000011XXX 1000100XXX 1000101XXX 1000110XXX 1000111XXX 1001000XXX 1001001XXX 1001010XXX 1001011XXX 1001100XXX 1001101XXX 1001110XXX 1001111XXX 1010000XXX 1010001XXX 1010010XXX 1010011XXX 1010100XXX 1010101XXX 1010110XXX 1010111XXX 1011000XXX 1011001XXX Sector Size (Kwords) 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 Address Range (x16) 148000h-14FFFFh 150000h-157FFFh 158000h-15FFFFh 160000h-167FFFh 168000h-16FFFFh 170000h-177FFFh 178000h-17FFFFh 180000h-187FFFh 188000h-18FFFFh 190000h-197FFFh 198000h-19FFFFh 1A0000h-1A7FFFh 1A8000h-1AFFFFh 1B0000h-1B7FFFh 1B8000h-1BFFFFh 1C0000h-1C7FFFh 1C8000h-1CFFFFh 1D0000h-1D7FFFh 1D8000h-1DFFFFh 1E0000h-1E7FFFh 1E8000h-1EFFFFh 1F0000h-1F7FFFh 1F8000h-1FFFFFh 200000h-207FFFh 208000h-20FFFFh 210000h-217FFFh 218000h-21FFFFh 220000h-227FFFh 228000h-22FFFFh 230000h-237FFFh 238000h-23FFFFh 240000h-247FFFh 248000h-24FFFFh 250000h-257FFFh 258000h-25FFFFh 260000h-267FFFh 268000h-26FFFFh 270000h-277FFFh 278000h-27FFFFh 280000h-287FFFh 288000h-28FFFFh 290000h-297FFFh 298000h-29FFFFh 2A0000h-2A7FFFh 2A8000h-2AFFFFh 2B0000h-2B7FFFh 2B8000h-2BFFFFh 2C0000h-2C7FFFh 2C8000h-2CFFFFh
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Table 10.8 S29PL129J Sector Architecture (Sheet 3 of 6)
Bank Sector SA1-97 SA1-98 SA1-99 SA1-100 SA1-101 SA1-102 SA1-103 SA1-104 SA1-105 SA1-106 SA1-107 SA1-108 SA1-109 SA1-110 SA1-111 SA1-112 SA1-113 SA1-114 Bank 1B SA1-115 SA1-116 SA1-117 SA1-118 SA1-119 SA1-120 SA1-121 SA1-122 SA1-123 SA1-124 SA1-125 SA1-126 SA1-127 SA1-128 SA1-129 SA1-130 SA1-131 SA1-132 SA1-133 SA1-134 SA2-0 SA2-1 SA2-2 SA2-3 Bank 2A SA2-4 SA2-5 SA2-6 SA2-7 SA2-8 SA2-9 SA2-10 CE1# 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 CE2# 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 Sector Address (A21-A12) 1011010XXX 1011011XXX 1011100XXX 1011101XXX 1011110XXX 1011111XXX 1100000XXX 1100001XXX 1100010XXX 1100011XXX 1100100XXX 1100101XXX 1100110XXX 1100111XXX 1101000XXX 1101001XXX 1101010XXX 1101011XXX 1101100XXX 1101101XXX 1101110XXX 1101111XXX 1110000XXX 1110001XXX 1110010XXX 1110011XXX 1110100XXX 1110101XXX 1110110XXX 1110111XXX 1111000XXX 1111001XXX 1111010XXX 1111011XXX 1111100XXX 1111101XXX 1111110XXX 1111111XXX 0000000XXX 0000001XXX 0000010XXX 0000011XXX 0000100XXX 0000101XXX 0000110XXX 0000111XXX 0001000XXX 0001001XXX 0001010XXX Sector Size (Kwords) 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 Address Range (x16) 2D0000h-2D7FFFh 2D8000h-2DFFFFh 2E0000h-2E7FFFh 2E8000h-2EFFFFh 2F0000h-2F7FFFh 2F8000h-2FFFFFh 300000h-307FFFh 308000h-30FFFFh 310000h-317FFFh 318000h-31FFFFh 320000h-327FFFh 328000h-32FFFFh 330000h-337FFFh 338000h-33FFFFh 340000h-347FFFh 348000h-34FFFFh 350000h-357FFFh 358000h-35FFFFh 360000h-367FFFh 368000h-36FFFFh 370000h-377FFFh 378000h-37FFFFh 380000h-387FFFh 388000h-38FFFFh 390000h-397FFFh 398000h-39FFFFh 3A0000h-3A7FFFh 3A8000h-3AFFFFh 3B0000h-3B7FFFh 3B8000h-3BFFFFh 3C0000h-3C7FFFh 3C8000h-3CFFFFh 3D0000h-3D7FFFh 3D8000h-3DFFFFh 3E0000h-3E7FFFh 3E8000h-3EFFFFh 3F0000h-3F7FFFh 3F8000h-3FFFFFh 000000h-007FFFh 008000h-00FFFFh 010000h-017FFFh 018000h-01FFFFh 020000h-027FFFh 028000h-02FFFFh 030000h-037FFFh 038000h-03FFFFh 040000h-047FFFh 048000h-04FFFFh 050000h-057FFFh
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Table 10.8 S29PL129J Sector Architecture (Sheet 4 of 6)
Bank Sector SA2-11 SA2-12 SA2-13 SA2-14 SA2-15 SA2-16 SA2-17 SA2-18 SA2-19 SA2-20 SA2-21 SA2-22 SA2-23 SA2-24 SA2-25 SA2-26 SA2-27 SA2-28 SA2-29 SA2-30 SA2-31 SA2-32 SA2-33 Bank 2A SA2-34 SA2-35 SA2-36 SA2-37 SA2-38 SA2-39 SA2-40 SA2-41 SA2-42 SA2-43 SA2-44 SA2-45 SA2-46 SA2-47 SA2-48 SA2-49 SA2-50 SA2-51 SA2-52 SA2-53 SA2-54 SA2-55 SA2-56 SA2-57 SA2-58 SA2-59 CE1# 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 CE2# 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 Sector Address (A21-A12) 0001011XXX 0001100XXX 0001101XXX 0001110XXX 0001111XXX 0010000XXX 0010001XXX 0010010XXX 0010011XXX 0010100XXX 0010101XXX 0010110XXX 0010111XXX 0011000XXX 0011001XXX 0011010XXX 0011011XXX 0011100XXX 0011101XXX 0011110XXX 0011111XXX 0100000XXX 0100001XXX 0100010XXX 0100011XXX 0100100XXX 0100101XXX 0100110XXX 0100111XXX 0101000XXX 0101001XXX 0101010XXX 0101011XXX 0101100XXX 0101101XXX 0101110XXX 0101111XXX 0110000XXX 0110001XXX 0110010XXX 0110011XXX 0110100XXX 0110101XXX 0110110XXX 0110111XXX 0111000XXX 0111001XXX 0111010XXX 0111011XXX Sector Size (Kwords) 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 Address Range (x16) 058000h-05FFFFh 060000h-067FFFh 068000h-06FFFFh 070000h-077FFFh 078000h-07FFFFh 080000h-087FFFh 088000h-08FFFFh 090000h-097FFFh 098000h-09FFFFh 0A0000h-0A7FFFh 0A8000h-0AFFFFh 0B0000h-0B7FFFh 0B8000h-0BFFFFh 0C0000h-0C7FFFh 0C8000h-0CFFFFh 0D0000h-0D7FFFh 0D8000h-0DFFFFh 0E0000h-0E7FFFh 0E8000h-0EFFFFh 0F0000h-0F7FFFh 0F8000h-0FFFFFh 100000h-107FFFh 108000h-10FFFFh 110000h-117FFFh 118000h-11FFFFh 120000h-127FFFh 128000h-12FFFFh 130000h-137FFFh 138000h-13FFFFh 140000h-147FFFh 148000h-14FFFFh 150000h-157FFFh 158000h-15FFFFh 160000h-167FFFh 168000h-16FFFFh 170000h-177FFFh 178000h-17FFFFh 180000h-187FFFh 188000h-18FFFFh 190000h-197FFFh 198000h-19FFFFh 1A0000h-1A7FFFh 1A8000h-1AFFFFh 1B0000h-1B7FFFh 1B8000h-1BFFFFh 1C0000h-1C7FFFh 1C8000h-1CFFFFh 1D0000h-1D7FFFh 1D8000h-1DFFFFh
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Table 10.8 S29PL129J Sector Architecture (Sheet 5 of 6)
Bank Sector SA2-60 SA2-61 SA2-62 SA2-63 SA2-64 SA2-65 SA2-66 SA2-67 SA2-68 SA2-69 SA2-70 SA2-71 SA2-72 SA2-73 SA2-74 SA2-75 SA2-76 Bank 2A SA2-77 SA2-78 SA2-79 SA2-80 SA2-81 SA2-82 SA2-83 SA2-84 SA2-85 SA2-86 SA2-87 SA2-88 SA2-89 SA2-90 SA2-91 SA2-92 SA2-93 SA2-94 SA2-95 SA2-96 SA2-97 SA2-98 SA2-99 SA2-100 Bank 2B SA2-101 SA2-102 SA2-103 SA2-104 SA2-105 SA2-106 SA2-107 SA2-108 CE1# 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 CE2# 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 Sector Address (A21-A12) 0111100XXX 0111101XXX 0111110XXX 0111111XXX 1000000XXX 1000001XXX 1000010XXX 1000011XXX 1000100XXX 1000101XXX 1000110XXX 1000111XXX 1001000XXX 1001001XXX 1001010XXX 1001011XXX 1001100XXX 1001101XXX 1001110XXX 1001111XXX 1010000XXX 1010001XXX 1010010XXX 1010011XXX 1010100XXX 1010101XXX 1010110XXX 1010111XXX 1011000XXX 1011001XXX 1011010XXX 1011011XXX 1011100XXX 1011101XXX 1011110XXX 1011111XXX 1100000XXX 1100001XXX 1100010XXX 1100011XXX 1100100XXX 1100101XXX 1100110XXX 1100111XXX 1101000XXX 1101001XXX 1101010XXX 1101011XXX 1101100XXX Sector Size (Kwords) 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 Address Range (x16) 1E0000h-1E7FFFh 1E8000h-1EFFFFh 1F0000h-1F7FFFh 1F8000h-1FFFFFh 200000h-207FFFh 208000h-20FFFFh 210000h-217FFFh 218000h-21FFFFh 220000h-227FFFh 228000h-22FFFFh 230000h-237FFFh 238000h-23FFFFh 240000h-247FFFh 248000h-24FFFFh 250000h-257FFFh 258000h-25FFFFh 260000h-267FFFh 268000h-26FFFFh 270000h-277FFFh 278000h-27FFFFh 280000h-287FFFh 288000h-28FFFFh 290000h-297FFFh 298000h-29FFFFh 2A0000h-2A7FFFh 2A8000h-2AFFFFh 2B0000h-2B7FFFh 2B8000h-2BFFFFh 2C0000h-2C7FFFh 2C8000h-2CFFFFh 2D0000h-2D7FFFh 2D8000h-2DFFFFh 2E0000h-2E7FFFh 2E8000h-2EFFFFh 2F0000h-2F7FFFh 2F8000h-2FFFFFh 300000h-307FFFh 308000h-30FFFFh 310000h-317FFFh 318000h-31FFFFh 320000h-327FFFh 328000h-32FFFFh 330000h-337FFFh 338000h-33FFFFh 340000h-347FFFh 348000h-34FFFFh 350000h-357FFFh 358000h-35FFFFh 360000h-367FFFh
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Table 10.8 S29PL129J Sector Architecture (Sheet 6 of 6)
Bank Sector SA2-109 SA2-110 SA2-111 SA2-112 SA2-113 SA2-114 SA2-115 SA2-116 SA2-117 SA2-118 SA2-119 SA2-120 Bank 2B SA2-121 SA2-122 SA2-123 SA2-124 SA2-125 SA2-126 SA2-127 SA2-128 SA2-129 SA2-130 SA2-131 SA2-132 SA2-133 SA2-134 CE1# 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 CE2# 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 Sector Address (A21-A12) 1101101XXX 1101110XXX 1101111XXX 1110000XXX 1110001XXX 1110010XXX 1110011XXX 1110100XXX 1110101XXX 1110110XXX 1110111XXX 1111000XXX 1111001XXX 1111010XXX 1111011XXX 1111100XXX 1111101XXX 1111110XXX 1111111000 1111111001 1111111010 1111111011 1111111100 1111111101 1111111110 1111111111 Sector Size (Kwords) 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 4 4 4 4 4 4 4 4 Address Range (x16) 368000h-36FFFFh 370000h-377FFFh 378000h-37FFFFh 380000h-387FFFh 388000h-38FFFFh 390000h-397FFFh 398000h-39FFFFh 3A0000h-3A7FFFh 3A8000h-3AFFFFh 3B0000h-3B7FFFh 3B8000h-3BFFFFh 3C0000h-3C7FFFh 3C8000h-3CFFFFh 3D0000h-3D7FFFh 3D8000h-3DFFFFh 3E0000h-3E7FFFh 3E8000h-3EFFFFh 3F0000h-3F7FFFh 3F8000h-3F8FFFh 3F9000h-3F9FFFh 3FA000h-3FAFFFh 3FB000h-3FBFFFh 3FC000h-3FCFFFh 3FD000h-3FDFFFh 3FE000h-3FEFFFh 3FF000h-3FFFFFh
Table 10.9 Secured Silicon Sector Addresses
Sector Size Factory-Locked Area Customer-Lockable Area 64 words 64 words Address Range 000000h-00003Fh 000040h-00007Fh
10.8
Autoselect Mode
The autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on DQ7-DQ0. This mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programming algorithm. However, the autoselect codes can also be accessed in-system through the command register. When using programming equipment, the autoselect mode requires VID on address pin A9. Address pins must be as shown in Table 10.10 on page 40 and Table 10.11 on page 40. In addition, when verifying sector protection, the sector address must appear on the appropriate highest order address bits (see Table 10.4 on page 21). Table 10.10 and Table 10.11 show the remaining address bits that are don't care. When all necessary bits have been set as required, the programming equipment may then read the corresponding identifier code on DQ7-DQ0. However, the autoselect codes can also be accessed in-system through the command register, for instances when the device is erased or programmed in a system without access to high voltage on the A9 pin. The command sequence is illustrated in Table 15.1 on page 62. Note that if a Bank Address (BA) (on address bits PL127J: A22-A20, PL129J and PL064J: A21-A19, PL032J: A20-A18) is asserted during the third write cycle of the autoselect command, the host system can read autoselect data that bank and then immediately read array data from the other bank, without exiting the autoselect mode.
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To access the autoselect codes in-system, the host system can issue the autoselect command via the command register, as shown in Table 15.1 on page 62. This method does not require VID. Refer to the Autoselect Command Sequence on page 56 for more information. Table 10.10 Autoselect Codes (High Voltage Method)
Amax to A12 BA A5 to A4 X DQ15 to DQ0 0001h 227Eh 2220h (PL127J) 2202h (PL064J) 220Ah (PL032J) 2200h (PL127J) 2201h (PL064J) 2201h (PL032J) 0001h (protected), 0000h (unprotected) DQ7=1 (factory locked), DQ6=1 (factory and customer locked)
Description Manufacturer ID: Spansion products Read Cycle 1 Device ID Read Cycle 2
CE# L L L
OE# L
WE# H
A10 X
A9 VI
D
A8 X
A7 L
A6 L
A3 L L H
A2 L L H
A1 L L H
A0 L H L
L Read Cycle 3 L
H
BA
X
VI
D
X
L
L
L H H H H
Sector Protection Verification Secured Silicon Indicator Bit (DQ7, DQ6)
L
L
H
SA
X
VI
D
X
L
L
L
L
L
H
L
L
L
H
BA (See Note)
X
VI
D
X
X
L
X
L
L
H
H
Legend L = Logic Low = VIL, H = Logic High = VIH, BA = Bank Address, SA = Sector Address, X = Don't care. Note When Polling the Secured Silicon indicator bit the Bank Address (BA) should be set within the address range 004000h-03FFFFh.
Table 10.11 Autoselect Codes for PL129J
A21 to A12 X A5 to A4 X DQ15 to DQ0 0001h
Description Manufacturer ID: Spansion products Read Cycle 1 Device ID Read Cycle 2 Read Cycle 3 Sector Protection Verification
CE1# L H L H L H L H L H L
CE2# H L H L H L H L H L H L
OE# L
WE# H
A10 X
A9 VI
D
A8 X
A7 L
A6 L
A3 L
A2 L
A1 L
A0 L
L VI
D
L
L
H
227Eh
L
H
X
X
X
L
L
L
H
H
H
L
2221h
H
H
H
H
2200h 0001h (protected), 0000h (unprotected) DQ7=1 (factory locked), DQ6=1 (factory and customer locked)
L
H
SA
X
VI
D
X
L
L
L
L
L
H
L
Secured Silicon Indicator Bit (DQ7, DQ6)
H
L
H
X (Note 1)
X
VI
D
X
X
L
X
L
L
H
H
Legend L = Logic Low = VIL, H = Logic High = VIH, BA = Bank Address, SA = Sector Address, X = Don't care. Note 1. When Polling the Secured Silicon indicator bit the A21 to A12 should be set within the address range 004000h-03FFFFh. 2. The autoselect codes may also be accessed in-system by using the command sequences
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Table 10.12 PL127J Boot Sector/Sector Block Addresses for Protection/Unprotection
Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11-SA14 SA15-SA18 SA19-SA22 SA23-SA26 SA27-SA30 SA31-SA34 SA35-SA38 SA39-SA42 SA43-SA46 SA47-SA50 SA51-SA54 SA55-SA58 SA59-SA62 SA63-SA66 SA67-SA70 SA71-SA74 SA75-SA78 SA79-SA82 SA83-SA86 SA87-SA90 SA91-SA94 SA95-SA98 SA99-SA102 SA103-SA106 SA107-SA110 SA111-SA114 SA115-SA118 SA119-SA122 SA123-SA126 SA127-SA130 A22-A12 00000000000 00000000001 00000000010 00000000011 00000000100 00000000101 00000000110 00000000111 00000001XXX 00000010XXX 00000011XXX 000001XXXXX 000010XXXXX 000011XXXXX 000100XXXXX 000101XXXXX 000110XXXXX 000111XXXXX 001000XXXXX 001001XXXXX 001010XXXXX 001011XXXXX 001100XXXXX 001101XXXXX 001110XXXXX 001111XXXXX 010000XXXXX 010001XXXXX 010010XXXXX 010011XXXXX 010100XXXXX 010101XXXXX 010110XXXXX 010111XXXXX 011000XXXXX 011001XXXXX 011010XXXXX 011011XXXXX 011100XXXXX 011101XXXXX 011110XXXXX Sector/ Sector Block Size 4 Kwords 4 Kwords 4 Kwords 4 Kwords 4 Kwords 4 Kwords 4 Kwords 4 Kwords 32 Kwords 32 Kwords 32 Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords Sector SA131-SA134 SA135-SA138 SA139-SA142 SA143-SA146 SA147-SA150 SA151-SA154 SA155-SA158 SA159-SA162 SA163-SA166 SA167-SA170 SA171-SA174 SA175-SA178 SA179-SA182 SA183-SA186 SA187-SA190 SA191-SA194 SA195-SA198 SA199-SA202 SA203-SA206 SA207-SA210 SA211-SA214 SA215-SA218 SA219-SA222 SA223-SA226 SA227-SA230 SA231-SA234 SA235-SA238 SA239-SA242 SA243-SA246 SA247-SA250 SA251-SA254 SA255-SA258 SA259 SA260 SA261 SA262 SA263 SA264 SA265 A22-A12 011111XXXXX 100000XXXXX 100001XXXXX 100010XXXXX 100011XXXXX 100100XXXXX 100101XXXXX 100110XXXXX 100111XXXXX 101000XXXXX 101001XXXXX 101010XXXXX 101011XXXXX 101100XXXXX 101101XXXXX 101110XXXXX 101111XXXXX 110000XXXXX 110001XXXXX 110010XXXXX 110011XXXXX 110100XXXXX 110101XXXXX 110110XXXXX 110111XXXXX 111000XXXXX 111001XXXXX 111010XXXXX 111011XXXXX 111100XXXXX 111101XXXXX 111110XXXXX 11111100XXX 11111101XXX 11111110XXX 11111111000 11111111001 11111111010 11111111011 Sector/ Sector Block Size 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 32 Kwords 32 Kwords 32 Kwords 4 Kwords 4 Kwords 4 Kwords 4 Kwords
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Table 10.13 PL129J Boot Sector/Sector Block Addresses for Protection/Unprotection
CE1# Control Sector Group SA1-0 SA1-1 SA1-2 SA1-3 SA1-4 SA1-5 SA1-6 SA1-7 SA1-8 SA1-9 SA1-10 SA1-11 - SA1-14 SA1-15 - SA1-18 SA1-19 - SA1-22 SA1-23 - SA1-26 SA1-27 - SA1-30 SA1-31 - SA1-34 SA1-35 - SA1-38 SA1-39 - SA1-42 SA1-43 - SA1-46 SA1-47 - SA1-50 SA1-51 - SA1-54 SA1-55 - SA1-58 SA1-59 - SA1-62 SA1-63 - SA1-66 SA1-67 - SA1-70 SA1-71 - SA1-74 SA1-75 - SA1-78 SA1-79 - SA1-82 SA1-83 - SA1-86 SA1-87 - SA1-90 SA1-91 - SA1-94 SA1-95 - SA1-98 SA1-99 - SA1-102 SA1-103 - SA1-106 SA1-107 - SA1-110 SA1-111 - SA1-114 SA1-115 - SA1-118 SA1-119 - SA1-122 SA1-123 - SA1-126 SA1-127 - SA1-130 SA1-131 - SA1-134 A21-12 0000000000 0000000001 0000000010 0000000011 0000000100 0000000101 0000000110 0000000111 0000001XXX 0000010XXX 0000011XXX 00001XXXXX 00010XXXXX 00011XXXXX 00100XXXXX 00101XXXXX 00110XXXXX 00111XXXXX 01000XXXXX 01001XXXXX 01010XXXXX 01011XXXXX 01100XXXXX 01101XXXXX 01110XXXXX 01111XXXXX 10000XXXXX 10001XXXXX 10010XXXXX 10011XXXXX 10100XXXXX 10101XXXXX 10110XXXXX 10111XXXXX 11000XXXXX 11001XXXXX 11010XXXXX 11011XXXXX 11100XXXXX 11101XXXXX 11110XXXXX 11111XXXXX Sector/Sector Block Size 4 Kwords 4 Kwords 4 Kwords 4 Kwords 4 Kwords 4 Kwords 4 Kwords 4 Kwords 32 Kwords 32 Kwords 32 Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords Sector Group SA2-0-SA2-3 SA2-4-SA2-7 SA2-8-SA2-11 SA2-12-SA2-15 SA2-16-SA2-19 SA2-20-SA2-23 SA2-24-SA2-27 SA2-28-SA2-31 SA2-32-SA2-35 SA2-36-SA2-39 SA2-40-SA2-43 SA2-44-SA2-47 SA2-48-SA2-51 SA2-52-SA2-55 SA2-56-SA2-59 SA2-60-SA2-63 SA2-64-SA2-67 SA2-68-SA2-71 SA2-72-SA2-75 SA2-76-SA2-79 SA2-80-SA2-83 SA2-84-SA2-87 SA2-88-SA2-91 SA2-92-SA2-95 SA2-96-SA2-99 SA2-100-SA2-103 SA2-104-SA2-107 SA2-108-SA2-111 SA2-112-SA2-115 SA2-116-SA2-119 SA2-120-SA2-123 SA2-124 SA2-125 SA2-126 SA2-127 SA2-128 SA2-129 SA2-130 SA2-131 SA2-132 SA2-133 SA2-134 CE2# Control A21-12 00000XXXXX 00001XXXXX 00010XXXXX 00011XXXXX 00100XXXXX 00101XXXXX 00110XXXXX 00111XXXXX 01000XXXXX 01001XXXXX 01010XXXXX 01011XXXXX 01100XXXXX 01101XXXXX 01110XXXXX 01111XXXXX 10000XXXXX 10001XXXXX 10010XXXXX 10011XXXXX 10100XXXXX 10101XXXXX 10110XXXXX 10111XXXXX 11000XXXXX 11001XXXXX 11010XXXXX 11011XXXXX 11100XXXXX 11101XXXXX 11110XXXXX 1111100XXX 1111101XXX 1111110XXX 1111111000 1111111001 1111111010 1111111011 1111111100 1111111101 1111111110 1111111111 Sector/Sector Block Size 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 32 Kwords 32 Kwords 32 Kwords 4 Kwords 4 Kwords 4 Kwords 4 Kwords 4 Kwords 4 Kwords 4 Kwords 4 Kwords
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10.9
Selecting a Sector Protection Mode
Table 10.14 PL064J Boot Sector/Sector Block Addresses for Protection/Unprotection
Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11-SA14 SA15-SA18 SA19-SA22 SA23-SA26 SA27-SA30 SA31-SA34 SA35-SA38 SA39-SA42 SA43-SA46 SA47-SA50 SA51-SA54 SA55-SA58 SA59-SA62 SA63-SA66 SA67-SA70 SA71-SA74 SA75-SA78 SA79-SA82 SA83-SA86 SA87-SA90 SA91-SA94 SA95-SA98 SA99-SA102 SA103-SA106 SA107-SA110 SA111-SA114 SA115-SA118 SA119-SA122 SA123-SA126 SA127-SA130 SA131 SA132 SA133 SA134 SA135 SA136 SA137 SA138 SA139 SA140 SA141 A21-A12 0000000000 0000000001 0000000010 0000000011 0000000100 0000000101 0000000110 0000000111 0000001XXX 0000010XXX 0000011XXX 00001XXXXX 00010XXXXX 00011XXXXX 00100XXXXX 00101XXXXX 00110XXXXX 00111XXXXX 01000XXXXX 01001XXXXX 01010XXXXX 01011XXXXX 01100XXXXX 01101XXXXX 01110XXXXX 01111XXXXX 10000XXXXX 10001XXXXX 10010XXXXX 10011XXXXX 10100XXXXX 10101XXXXX 10110XXXXX 10111XXXXX 11000XXXXX 11001XXXXX 11010XXXXX 11011XXXXX 11100XXXXX 11101XXXXX 11110XXXXX 1111100XXX 1111101XXX 1111110XXX 1111111000 1111111001 1111111010 1111111011 1111111100 1111111101 1111111110 1111111111 Sector/Sector Block Size 4 Kwords 4 Kwords 4 Kwords 4 Kwords 4 Kwords 4 Kwords 4 Kwords 4 Kwords 32 Kwords 32 Kwords 32 Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 128 (4x32) Kwords 32 Kwords 32 Kwords 32 Kwords 4 Kwords 4 Kwords 4 Kwords 4 Kwords 4 Kwords 4 Kwords 4 Kwords 4 Kwords
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The device is shipped with all sectors unprotected. Optional Spansion programming services enable programming and protecting sectors at the factory prior to shipping the device. Contact your local sales office for details. It is possible to determine whether a sector is protected or unprotected. See the Table 10.9, Secured Silicon Sector Addresses on page 39 for details. Table 10.15 Sector Protection Schemes
DYB 0 0 0 1 1 0 1 1 PPB 0 0 1 0 1 1 0 1 PPB Lock 0 1 0 0 0 1 1 1 Protected--PPB not changeable, DYB is changeable Protected--PPB and DYB are changeable Sector State Unprotected--PPB and DYB are changeable Unprotected--PPB not changeable, DYB is changeable
11. Sector Protection
The PL127J, PL129J, PL064J, and PL032J features several levels of sector protection, which can disable both the program and erase operations in certain sectors or sector groups:
11.1
Persistent Sector Protection
A command sector protection method that replaces the old 12 V controlled protection method.
11.2
Password Sector Protection
A highly sophisticated protection method that requires a password before changes to certain sectors or sector groups are permitted
11.3
WP# Hardware Protection
A write protect pin that can prevent program or erase operations in sectors SA1-133, SA1-134, SA2-0 and SA2-1. The WP# Hardware Protection feature is always available, independent of the software managed protection method chosen.
11.4
Selecting a Sector Protection Mode
All parts default to operate in the Persistent Sector Protection mode. The customer must then choose if the Persistent or Password Protection method is most desirable. There are two one-time programmable nonvolatile bits that define which sector protection method will be used. If the Persistent Sector Protection method is desired, programming the Persistent Sector Protection Mode Locking Bit permanently sets the device to the Persistent Sector Protection mode. If the Password Sector Protection method is desired, programming the Password Mode Locking Bit permanently sets the device to the Password Sector Protection mode. It is not possible to switch between the two protection modes once a locking bit has been set. One of the two modes must be selected when the device is first programmed. This prevents a program or virus from later setting the Password Mode Locking Bit, which would cause an unexpected shift from the default Persistent Sector Protection Mode into the Password Protection Mode. The device is shipped with all sectors unprotected. Optional Spansion programming services enable programming and protecting sectors at the factory prior to shipping the device. Contact your local sales office for details. It is possible to determine whether a sector is protected or unprotected. See Autoselect Mode on page 39 for details.
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12. Persistent Sector Protection
The Persistent Sector Protection method replaces the 12 V controlled protection method in previous flash devices. This new method provides three different sector protection states: Persistently Locked--The sector is protected and cannot be changed. Dynamically Locked--The sector is protected and can be changed by a simple command. Unlocked--The sector is unprotected and can be changed by a simple command. To achieve these states, three types of "bits" are used: Persistent Protection Bit Persistent Protection Bit Lock Persistent Sector Protection Mode Locking Bit
12.1
Persistent Protection Bit (PPB)
A single Persistent (non-volatile) Protection Bit is assigned to a maximum four sectors (see the sector address tables for specific sector protection groupings). All 4 Kword boot-block sectors have individual sector Persistent Protection Bits (PPBs) for greater flexibility. Each PPB is individually modifiable through the PPB Write Command. The device erases all PPBs in parallel. If any PPB requires erasure, the device must be instructed to preprogram all of the sector PPBs prior to PPB erasure. Otherwise, a previously erased sector PPBs can potentially be over-erased. The flash device does not have a built-in means of preventing sector PPBs overerasure.
12.2
Persistent Protection Bit Lock (PPB Lock)
The Persistent Protection Bit Lock (PPB Lock) is a global volatile bit. When set to "1", the PPBs cannot be changed. When cleared ("0"), the PPBs are changeable. There is only one PPB Lock bit per device. The PPB Lock is cleared after power-up or hardware reset. There is no command sequence to unlock the PPB Lock.
12.3
Dynamic Protection Bit (DYB)
A volatile protection bit is assigned for each sector. After power-up or hardware reset, the contents of all DYBs is "0". Each DYB is individually modifiable through the DYB Write Command. When the parts are first shipped, the PPBs are cleared, the DYBs are cleared, and PPB Lock is defaulted to power up in the cleared state - meaning the PPBs are changeable. When the device is first powered on the DYBs power up cleared (sectors not protected). The Protection State for each sector is determined by the logical OR of the PPB and the DYB related to that sector. For the sectors that have the PPBs cleared, the DYBs control whether or not the sector is protected or unprotected. By issuing the DYB Write command sequences, the DYBs will be set or cleared, thus placing each sector in the protected or unprotected state. These are the so-called Dynamic Locked or Unlocked states. They are called dynamic states because it is very easy to switch back and forth between the protected and unprotected conditions. This allows software to easily protect sectors against inadvertent changes yet does not prevent the easy removal of protection when changes are needed. The DYBs maybe set or cleared as often as needed. The PPBs allow for a more static, and difficult to change, level of protection. The PPBs retain their state across power cycles because they are non-volatile. Individual PPBs are set with a command but must all be cleared as a group through a complex sequence of program and erasing commands. The PPBs are also limited to 100 erase cycles. The PPB Lock bit adds an additional level of protection. Once all PPBs are programmed to the desired settings, the PPB Lock may be set to "1". Setting the PPB Lock disables all program and erase commands to the non-volatile PPBs. In effect, the PPB Lock Bit locks the PPBs into their current state. The only way to clear the PPB Lock is to go through a power cycle. System boot code can determine if any changes to the PPB are needed; for example, to allow new system code to be downloaded. If no changes are needed then the boot code can set the PPB Lock to disable any further changes to the PPBs during system operation.
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The WP#/ACC write protect pin adds a final level of hardware protection to sectors SA1-133, SA1-134, SA20 and SA2-1. When this pin is low it is not possible to change the contents of these sectors. These sectors generally hold system boot code. The WP#/ACC pin can prevent any changes to the boot code that could override the choices made while setting up sector protection during system initialization. For customers who are concerned about malicious viruses there is another level of security - the persistently locked state. To persistently protect a given sector or sector group, the PPBs associated with that sector need to be set to "1". Once all PPBs are programmed to the desired settings, the PPB Lock should be set to "1". Setting the PPB Lock automatically disables all program and erase commands to the Non-Volatile PPBs. In effect, the PPB Lock "freezes" the PPBs into their current state. The only way to clear the PPB Lock is to go through a power cycle. It is possible to have sectors that have been persistently locked, and sectors that are left in the dynamic state. The sectors in the dynamic state are all unprotected. If there is a need to protect some of them, a simple DYB Write command sequence is all that is necessary. The DYB write command for the dynamic sectors switch the DYBs to signify protected and unprotected, respectively. If there is a need to change the status of the persistently locked sectors, a few more steps are required. First, the PPB Lock bit must be disabled by either putting the device through a power-cycle, or hardware reset. The PPBs can then be changed to reflect the desired settings. Setting the PPB lock bit once again will lock the PPBs, and the device operates normally again. The best protection is achieved by executing the PPB lock bit set command early in the boot code, and protect the boot code by holding WP#/ACC = VIL. Table 17 contains all possible combinations of the DYB, PPB, and PPB lock relating to the status of the sector. In summary, if the PPB is set, and the PPB lock is set, the sector is protected and the protection can not be removed until the next power cycle clears the PPB lock. If the PPB is cleared, the sector can be dynamically locked or unlocked. The DYB then controls whether or not the sector is protected or unprotected. If the user attempts to program or erase a protected sector, the device ignores the command and returns to read mode. A program command to a protected sector enables status polling for approximately 1 s before the device returns to read mode without having modified the contents of the protected sector. An erase command to a protected sector enables status polling for approximately 50 s after which the device returns to read mode without having erased the protected sector. The programming of the DYB, PPB, and PPB lock for a given sector can be verified by writing a DYB/PPB/ PPB lock verify command to the device. There is an alternative means of reading the protection status. Take RESET# to VIL and hold WE# at VIH. (The high voltage A9 Autoselect Mode also works for reading the status of the PPBs). Scanning the addresses (A18-A11) while (A6, A1, A0) = (0, 1, 0) will produce a logical `1" code at device output DQ0 for a protected sector or a "0" for an unprotected sector. In this mode, the other addresses are don't cares. Address location with A1 = VIL are reserved for autoselect manufacturer and device codes.
12.4
Persistent Sector Protection Mode Locking Bit
Like the password mode locking bit, a Persistent Sector Protection mode locking bit exists to guarantee that the device remain in software sector protection. Once set, the Persistent Sector Protection locking bit prevents programming of the password protection mode locking bit. This guarantees that a hacker could not place the device in password protection mode.
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13. Password Protection Mode
The Password Sector Protection Mode method allows an even higher level of security than the Persistent Sector Protection Mode. There are two main differences between the Persistent Sector Protection and the Password Sector Protection Mode: When the device is first powered on, or comes out of a reset cycle, the PPB Lock bit set to the locked state, rather than cleared to the unlocked state. The only means to clear the PPB Lock bit is by writing a unique 64-bit Password to the device. The Password Sector Protection method is otherwise identical to the Persistent Sector Protection method. A 64-bit password is the only additional tool utilized in this method. Once the Password Mode Locking Bit is set, the password is permanently set with no means to read, program, or erase it. The password is used to clear the PPB Lock bit. The Password Unlock command must be written to the flash, along with a password. The flash device internally compares the given password with the pre-programmed password. If they match, the PPB Lock bit is cleared, and the PPBs can be altered. If they do not match, the flash device does nothing. There is a built-in 2 s delay for each "password check." This delay is intended to thwart any efforts to run a program that tries all possible combinations in order to crack the password.
13.1
Password and Password Mode Locking Bit
In order to select the Password sector protection scheme, the customer must first program the password. The password may be correlated to the unique Electronic Serial Number (ESN) of the particular flash device. Each ESN is different for every flash device; therefore each password should be different for every flash device. While programming in the password region, the customer may perform Password Verify operations. Once the desired password is programmed in, the customer must then set the Password Mode Locking Bit. This operation achieves two objectives: Permanently sets the device to operate using the Password Protection Mode. It is not possible to reverse this function. Disables all further commands to the password region. All program, and read operations are ignored. Both of these objectives are important, and if not carefully considered, may lead to unrecoverable errors. The user must be sure that the Password Protection method is desired when setting the Password Mode Locking Bit. More importantly, the user must be sure that the password is correct when the Password Mode Locking Bit is set. Due to the fact that read operations are disabled, there is no means to verify what the password is afterwards. If the password is lost after setting the Password Mode Locking Bit, there will be no way to clear the PPB Lock bit. The Password Mode Locking Bit, once set, prevents reading the 64-bit password on the DQ bus and further password programming. The Password Mode Locking Bit is not erasable. Once Password Mode Locking Bit is programmed, the Persistent Sector Protection Locking Bit is disabled from programming, guaranteeing that no changes to the protection scheme are allowed.
13.2
64-bit Password
The 64-bit Password is located in its own memory space and is accessible through the use of the Password Program and Verify commands (see "Password Verify Command"). The password function works in conjunction with the Password Mode Locking Bit, which when set, prevents the Password Verify command from reading the contents of the password on the pins of the device.
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13.3
Write Protect (WP#)
The Write Protect feature provides a hardware method of protecting the upper two and lower two sectors without using VID. This function is provided by the WP# pin and overrides the previously discussed High Voltage Sector Protection on page 48 method. If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in the two outermost 4 Kword sectors on both ends of the flash array independent of whether it was previously protected or unprotected. If the system asserts VIH on the WP#/ACC pin, the device reverts the upper two and lower two sectors to whether they were last set to be protected or unprotected. That is, sector protection or unprotection for these sectors depends on whether they were last protected or unprotected using the method described in the High Voltage Sector Protection on page 48. Note that the WP#/ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result.
13.3.1
Persistent Protection Bit Lock
The Persistent Protection Bit (PPB) Lock is a volatile bit that reflects the state of the Password Mode Locking Bit after power-up reset. If the Password Mode Lock Bit is also set after a hardware reset (RESET# asserted) or a power-up reset, the ONLY means for clearing the PPB Lock Bit in Password Protection Mode is to issue the Password Unlock command. Successful execution of the Password Unlock command clears the PPB Lock Bit, allowing for sector PPBs modifications. Asserting RESET#, taking the device through a power-on reset, or issuing the PPB Lock Bit Set command sets the PPB Lock Bit to a "1" when the Password Mode Lock Bit is not set. If the Password Mode Locking Bit is not set, including Persistent Protection Mode, the PPB Lock Bit is cleared after power-up or hardware reset. The PPB Lock Bit is set by issuing the PPB Lock Bit Set command. Once set the only means for clearing the PPB Lock Bit is by issuing a hardware or power-up reset. The Password Unlock command is ignored in Persistent Protection Mode.
13.4
High Voltage Sector Protection
Sector protection and unprotection may also be implemented using programming equipment. The procedure requires high voltage (VID) to be placed on the RESET# pin. Refer to Figure 13.1 on page 49 for details on this procedure. Note that for sector unprotect, all unprotected sectors must first be protected prior to the first sector write cycle.
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Figure 13.1 In-System Sector Protection/Sector Unprotection Algorithms
START PLSCNT = 1 RESET# = VID Wait 1 s Protect all sectors: The indicated portion of the sector protect algorithm must be performed for all unprotected sectors prior to issuing the first sector unprotect address START PLSCNT = 1 RESET# = VID Wait 1 s
Temporary Sector Unprotect Mode
No
First Write Cycle = 60h? Yes Set up sector address Sector Protect: Write 60h to sector address with A7-A0 = 00000010 No
No First Write Cycle = 60h? Yes All sectors protected? Yes Set up first sector address Sector Unprotect: Write 60h to sector address with A7-A0 = 01000010
Temporary Sector Unprotect Mode
Wait 150 s Verify Sector Protect: Write 40h to sector address with A7-A0 = 00000010 Read from sector address with A7-A0 = 00000010 No No PLSCNT = 25? Yes Data = 01h?
Increment PLSCNT
Reset PLSCNT = 1
Wait 15 ms Verify Sector Unprotect: Write 40h to sector address with A7-A0 = 00000010
Increment PLSCNT
Yes
No Yes No
Read from sector address with A7-A0 = 00000010 Set up next sector address
Remove VID from RESET# Write reset command
Protect another sector? No Remove VID from RESET#
PLSCNT = 1000? Yes
Data = 00h? Yes
Sector Protect complete
Remove VID from RESET# Write reset command
Last sector verified? Yes Remove VID from RESET#
No
Write reset command
Device failed
Sector Protect complete
Sector Protect Algorithm
Sector Protect complete
Write reset command Sector Unprotect complete
Device failed
Sector Unprotect Algorithm
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13.5
Temporary Sector Unprotect
This feature allows temporary unprotection of previously protected sectors to change data in-system. The Sector Unprotect mode is activated by setting the RESET# pin to VID. During this mode, formerly protected sectors can be programmed or erased by selecting the sector addresses. Once VID is removed from the RESET# pin, all the previously protected sectors are protected again. Figure 13.2 on page 50 shows the algorithm, and Figure 21.1 on page 81 shows the timing diagrams, for this feature. While PPB lock is set, the device cannot enter the Temporary Sector Unprotection Mode. Figure 13.2 Temporary Sector Unprotect Operation
START
RESET# = VID (Note 1)
Perform Erase or Program Operations
RESET# = VIH
Temporary Sector Unprotect Completed (Note 2)
Notes: 1. All protected sectors unprotected (If WP#/ACC = VIL, upper two and lower two sectors will remain protected). 2. All previously protected sectors are protected once again
13.6
Secured Silicon Sector Flash Memory Region
The Secured Silicon Sector feature provides a Flash memory region that enables permanent part identification through an Electronic Serial Number (ESN) The 128-word Secured Silicon sector is divided into 64 factory-lockable words that can be programmed and locked by the customer. The Secured Silicon sector is located at addresses 000000h-00007Fh in both Persistent Protection mode and Password Protection mode. Indicator bits DQ6 and DQ7 are used to indicate the factory-locked and customer locked status of the part. The system accesses the Secured Silicon Sector through a command sequence (see the Enter/Exit Secured Silicon Sector Command Sequence on page 56). After the system has written the Enter Secured Silicon Sector command sequence, it may read the Secured Silicon Sector by using the addresses normally occupied by the boot sectors. This mode of operation continues until the system issues the Exit Secured Silicon Sector command sequence, or until power is removed from the device. Once the Enter SecSi Sector Command sequence has been entered, the standard array cannot be accessed until the Exit SecSi Sector command has been entered or the device has been reset. On power-up, or following a hardware reset, the device reverts to sending commands to the normal address space. Note that the ACC function and unlock bypass modes are not available when the Secured Silicon Sector is enabled.
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13.6.1
Factory-Locked Area (64 words)
The factory-locked area of the Secured Silicon Sector (000000h-00003Fh) is locked when the part is shipped, whether or not the area was programmed at the factory. The Secured Silicon Sector Factory-locked Indicator Bit (DQ7) is permanently set to a "1". Optional Spansion programming services can program the factorylocked area with a random ESN, a customer-defined code, or any combination of the two. Because only Spansion can program and protect the factory-locked area, this method ensures the security of the ESN once the product is shipped to the field. Contact your local sales office for details on using Spansion's programming services. Note that the ACC function and unlock bypass modes are not available when the Secured Silicon sector is enabled.
13.6.2
Customer-Lockable Area (64 words)
The customer-lockable area of the Secured Silicon Sector (000040h-00007Fh) is shipped unprotected, which allows the customer to program and optionally lock the area as appropriate for the application. The Secured Silicon Sector Customer-locked Indicator Bit (DQ6) is shipped as "0" and can be permanently locked to "1" by issuing the Secured Silicon Protection Bit Program Command. The Secured Silicon Sector can be read any number of times, but can be programmed and locked only once. Note that the accelerated programming (ACC) and unlock bypass functions are not available when programming the Secured Silicon Sector. The Customer-lockable Secured Silicon Sector area can be protected using one of the following procedures: Write the three-cycle Enter Secured Silicon Sector Region command sequence, and then follow the insystem sector protect algorithm as shown in Figure 13.1 on page 49, except that RESET# may be at either VIH or VID. This allows in-system protection of the Secured Silicon Sector Region without raising any device pin to a high voltage. Note that this method is only applicable to the Secured Silicon Sector. To verify the protect/unprotect status of the Secured Silicon Sector, follow the algorithm shown in Figure on page 51. Once the Secured Silicon Sector is locked and verified, the system must write the Exit Secured Silicon Sector Region command sequence to return to reading and writing the remainder of the array. The Secured Silicon Sector lock must be used with caution since, once locked, there is no procedure available for unlocking the Secured Silicon Sector area and none of the bits in the Secured Silicon Sector memory space can be modified in any way.
13.6.3
Secured Silicon Sector Protection Bits
The Secured Silicon Sector Protection Bits prevent programming of the Secured Silicon Sector memory area. Once set, the Secured Silicon Sector memory area contents are non-modifiable. Figure 13.3 Secured Silicon Sector Protect Verify
START RESET# = VIH or VID Wait 1 s Write 60h to any address If data = 00h, SecSi Sector is unprotected. If data = 01h, SecSi Sector is protected.
Remove VIH or VID from RESET#
Write 40h to SecSi Sector address with A6 = 0, A1 = 1, A0 = 0 Read from SecSi Sector address with A6 = 0, A1 = 1, A0 = 0
Write reset command SecSi Sector Protect Verify complete
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13.7
Hardware Data Protection
The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes. In addition, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by spurious system level signals during VCC power-up and power-down transitions, or from system noise.
13.7.1
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC power-up and power-down. The command register and all internal program/erase circuits are disabled, and the device resets to the read mode. Subsequent writes are ignored until VCC is greater than VLKO. The system must provide the proper signals to the control pins to prevent unintentional writes when VCC is greater than VLKO.
13.7.2
Write Pulse "Glitch" Protection
Noise pulses of less than 3 ns (typical) on OE#, CE#, (CE1#, CE2# in PL129J) or WE# do not initiate a write cycle.
13.7.3
Logical Inhibit
Write cycles are inhibited by holding any one of OE# = VIL, CE# (CE1# = CE2# in PL129J)= VIH or WE# = VIH. To initiate a write cycle, CE# (CE1# / CE2# in PL129J) and WE# must be a logical zero while OE# is a logical one.
13.7.4
Power-Up Write Inhibit
If WE# = CE# (CE1#, CE2# in PL129J) = VIL and OE# = VIH during power up, the device does not accept commands on the rising edge of WE#. The internal state machine is automatically reset to the read mode on power-up.
14. Common Flash Memory Interface (CFI)
The Common Flash Interface (CFI) specification outlines device and host system software interrogation handshake, which allows specific vendor-specified software algorithms to be used for entire families of devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and backward-compatible for the specified flash device families. Flash vendors can standardize their existing interfaces for long-term compatibility. This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address 55h, any time the device is ready to read array data. The system can read CFI information at the addresses given in Table 14.1 on page 53 to Table 14.4 on page 54. To terminate reading CFI data, the system must write the reset command. The CFI Query mode is not accessible when the device is executing an Embedded Program or embedded Erase algorithm. The system can also write the CFI query command when the device is in the autoselect mode. The device enters the CFI query mode, and the system can read CFI data at the addresses given in Table 14.1 to Table 14.4. The system must write the reset command to return the device to reading array data. For further information, please refer to the CFI Specification and CFI Publication 100. Contact your local sales office for copies of these documents.
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Table 14.1 CFI Query Identification String
Addresses 10h 11h 12h 13h 14h 15h 16h 17h 18h 19h 1Ah Data 0051h 0052h 0059h 0002h 0000h 0040h 0000h 0000h 0000h 0000h 0000h Description Query Unique ASCII string "QRY"
Primary OEM Command Set Address for Primary Extended Table Alternate OEM Command Set (00h = none exists) Address for Alternate OEM Extended Table (00h = none exists)
Table 14.2 System Interface String
Addresses 1Bh 1Ch 1Dh 1Eh 1Fh 20h 21h 22h 23h 24h 25h 26h Data 0027h 0036h 0000h 0000h 0003h 0000h 0009h 0000h 0004h 0000h 0004h 0000h VCC Min. (write/erase) D7-D4: volt, D3-D0: 100 millivolt VCC Max. (write/erase) D7-D4: volt, D3-D0: 100 millivolt VPP Min. voltage (00h = no VPP pin present) VPP Max. voltage (00h = no VPP pin present) Typical timeout per single byte/word write 2N s Typical timeout for Min. size buffer write 2N s (00h = not supported) Typical timeout per individual block erase 2N ms Typical timeout for full chip erase 2N ms (00h = not supported) Max. timeout for byte/word write 2N times typical Max. timeout for buffer write 2N times typical Max. timeout per individual block erase 2N times typical Max. timeout for full chip erase 2N times typical (00h = not supported) Description
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Table 14.3 Device Geometry Definition
Addresses Data 0018h (PL127J) 0018h (PL129J) 0017h (PL064J) 0016h (PL032J) 0001h 0000h 0000h 0000h 0003h 0007h 0000h 0020h 0000h 00FDh (PL127J) 00FDh (PL129J) 007Dh (PL064J) 003Dh (PL032J) 0000h 0000h 0001h 0007h 0000h 0020h 0000h 0000h 0000h 0000h 0000h Erase Block Region 3 Information (refer to the CFI specification or CFI publication 100) Description
27h
Device Size = 2N byte
28h 29h 2Ah 2Bh 2Ch 2Dh 2Eh 2Fh 30h
Flash Device Interface description (refer to CFI publication 100) Max. number of byte in multi-byte write = 2N (00h = not supported) Number of Erase Block Regions within device Erase Block Region 1 Information (refer to the CFI specification or CFI publication 100)
31h
Erase Block Region 2 Information (refer to the CFI specification or CFI publication 100)
32h 33h 34h 35h 36h 37h 38h 39h 3Ah 3Bh 3Ch
Erase Block Region 4 Information (refer to the CFI specification or CFI publication 100)
Table 14.4 Primary Vendor-Specific Extended Query
Addresses 40h 41h 42h 43h 44h 45h Data 0050h 0052h 0049h 0031h 0033h TBD Query-unique ASCII string "PRI" Major version number, ASCII (reflects modifications to the silicon) Minor version number, ASCII (reflects modifications to the CFI table) Address Sensitive Unlock (Bits 1-0) 0 = Required, 1 = Not Required Silicon Revision Number (Bits 7-2) 46h 47h 48h 49h 0002h 0001h 0001h 0007h (PLxxxJ) 00E7h (PL127J) 00E7h (PL129J) 0077h (PL064J) 003Fh (PL032J) 0000h 0002h (PLxxxJ) 0085h 0095h Erase Suspend 0 = Not Supported, 1 = To Read Only, 2 = To Read & Write Sector Protect 0 = Not Supported, X = Number of sectors in per group Sector Temporary Unprotect 00 = Not Supported, 01 = Supported Sector Protect/Unprotect scheme 07 = Advanced Sector Protection Simultaneous Operation 00 = Not Supported, X = Number of Sectors excluding Bank 1 Burst Mode Type 00 = Not Supported, 01 = Supported Page Mode Type 00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page ACC (Acceleration) Supply Minimum 00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV ACC (Acceleration) Supply Maximum 00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV Description
4Ah
4Bh 4Ch 4Dh 4Eh
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Table 14.4 Primary Vendor-Specific Extended Query (Continued)
Addresses Data Description Top/Bottom Boot Sector Flag 00h = Uniform device, 01h = Both top and bottom boot with write protect, 02h = Bottom Boot Device, 03h = Top Boot Device, 04h = Both Top and Bottom Program Suspend 0 = Not supported, 1 = Supported Bank Organization 00 = Data at 4Ah is zero, X = Number of Banks Bank 1 Region Information X = Number of Sectors in Bank 1
4Fh
0001h
50h 57h
0001h 0004h 0027h (PL127J) 0027h (PL129J) 0017h (PL064J) 000Fh (PL032J) 0060h (PL127J) 0060h (PL129J) 0030h (PL064J) 0018h (PL032J) 0060h (PL127J) 0060h (PL129J) 0030h (PL064J) 0018h (PL032J) 0027h (PL127J) 0027h (PL129J) 0017h (PL064J) 000Fh (PL032J)
58h
59h
Bank 2 Region Information X = Number of Sectors in Bank 2
5Ah
Bank 3 Region Information X = Number of Sectors in Bank 3
5Bh
Bank 4 Region Information X = Number of Sectors in Bank 4
15. Command Definitions
Writing specific address and data commands or sequences into the command register initiates device operations. Table 15.1 on page 62 defines the valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence may place the device in an unknown state. A reset command is then required to return the device to reading array data. All addresses are latched on the falling edge of WE# or CE# (CE1# / CE2# in PL129J), whichever happens later. All data is latched on the rising edge of WE# or CE# (CE1# / CE2# in PL129J), whichever happens first. Refer to AC Characteristic on page 72 for timing diagrams.
15.1
Reading Array Data
The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. Each bank is ready to read array data after completing an Embedded Program or Embedded Erase algorithm. After the device accepts an Erase Suspend command, the corresponding bank enters the erase-suspendread mode, after which the system can read data from any non-erase-suspended sector within the same bank. The system can read array data using the standard read timing, except that if it reads at an address within erase-suspended sectors, the device outputs status data. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. See Erase Suspend/Erase Resume Commands on page 60 for more information. After the device accepts a Program Suspend command, the corresponding bank enters the programsuspend-read mode, after which the system can read data from any non-program-suspended sector within the same bank. See Program Suspend/Program Resume Commands on page 61 for more information. The system must issue the reset command to return a bank to the read (or erase-suspend-read) mode if DQ5 goes high during an active program or erase operation, or if the bank is in the autoselect mode. See the next section, Reset Command on page 56, for more information. See also Requirements for Reading Array Data on page 20 for more information. The table AC Characteristic on page 72 provides the read parameters, and Figure 16.2 on page 66 shows the timing diagram.
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15.2
Reset Command
Writing the reset command resets the banks to the read or erase-suspend-read mode. Address bits are don't cares for this command. The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the bank to which the system was writing to the read mode. Once erasure begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the bank to which the system was writing to the read mode. If the program command sequence is written to a bank that is in the Erase Suspend mode, writing the reset command returns that bank to the erase-suspend-read mode. Once programming begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in an autoselect command sequence. Once in the autoselect mode, the reset command must be written to return to the read mode. If a bank entered the autoselect mode while in the Erase Suspend mode, writing the reset command returns that bank to the erase-suspend-read mode. If DQ5 goes high during a program or erase operation, writing the reset command returns the banks to the read mode (or erase-suspend-read mode if that bank was in Erase Suspend and program-suspend-read mode if that bank was in Program Suspend).
15.3
Autoselect Command Sequence
The autoselect command sequence allows the host system to access the manufacturer and device codes, and determine whether or not a sector is protected. The autoselect command sequence may be written to an address within a bank that is either in the read or erase-suspend-read mode. The autoselect command may not be written while the device is actively programming or erasing in the other bank. The autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle that contains the bank address and the autoselect command. The bank then enters the autoselect mode. The system may read any number of autoselect codes without reinitiating the command sequence. Table 15.1 on page 62 shows the address and data requirements. To determine sector protection information, the system must write to the appropriate bank address (BA) and sector address (SA). Table 10.4 on page 21 shows the address range and bank number associated with each sector. The system must write the reset command to return to the read mode (or erase-suspend-read mode if the bank was previously in Erase Suspend).
15.4
Enter/Exit Secured Silicon Sector Command Sequence
The Secured Silicon Sector region provides a secured data area containing a random, eight word electronic serial number (ESN). The system can access the Secured Silicon Sector region by issuing the three-cycle Enter Secured Silicon Sector command sequence. The device continues to access the Secured Silicon Sector region until the system issues the four-cycle Exit Secured Silicon Sector command sequence. The Exit Secured Silicon Sector command sequence returns the device to normal operation. The Secured Silicon Sector is not accessible when the device is executing an Embedded Program or embedded Erase algorithm. Table 15.1 on page 62 shows the address and data requirements for both command sequences. See also Secured Silicon Sector Flash Memory Region on page 50 for further information. Note that the ACC function and unlock bypass modes are not available when the Secured Silicon Sector is enabled.
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15.5
Word Program Command Sequence
Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further controls or timings. The device automatically provides internally generated program pulses and verifies the programmed cell margin. Table 15.1 on page 62 shows the address and data requirements for the program command sequence. Note that the Secured Silicon Sector, autoselect, and CFI functions are unavailable when a [program/erase] operation is in progress. When the Embedded Program algorithm is complete, that bank then returns to the read mode and addresses are no longer latched. The system can determine the status of the program operation by using DQ7, DQ6, or RY/BY#. Refer to Write Operation Status on page 64 for information on these status bits. Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a hardware reset immediately terminates the program operation. The program command sequence should be reinitiated once that bank has returned to the read mode, to ensure data integrity. Note that the Secured Silicon Sector, autoselect and CFI functions are unavailable when the Secured Silicon Sector is enabled. Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from "0" back to a "1." Attempting to do so may cause that bank to set DQ5 = 1, or cause the DQ7 and DQ6 status bits to indicate the operation was successful. However, a succeeding read will show that the data is still "0." Only erase operations can convert a "0" to a "1."
15.5.1
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program data to a bank faster than using the standard program command sequence. The unlock bypass command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. That bank then enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is required to program in this mode. The first cycle in this sequence contains the unlock bypass program command, A0h; the second cycle contains the program address and data. Additional data is programmed in the same manner. This mode dispenses with the initial two unlock cycles required in the standard program command sequence, resulting in faster total programming time. Table 15.1 on page 62 shows the requirements for the command sequence. During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands are valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset command sequence. (See Table 15.2 on page 63) The device offers accelerated program operations through the WP#/ACC pin. When the system asserts VHH on the WP#/ACC pin, the device automatically enters the Unlock Bypass mode. The system may then write the two-cycle Unlock Bypass program command sequence. The device uses the higher voltage on the WP#/ ACC pin to accelerate the operation. Note that the WP#/ACC pin must not be at VHH any operation other than accelerated programming, or device damage may result. In addition, the WP#/ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result. Figure 15.1 on page 58 illustrates the algorithm for the program operation. Refer to the table Erase/Program Operations on page 76 for parameters, and Figure 20.6 on page 77 for timing diagrams.
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Figure 15.1 Program Operation
START
Write Program Command Sequence
Embedded Program algorithm in progress
Data Poll from System
Verify Data?
No
Yes No
Increment Address
Last Address?
Yes Programming Completed
Note See Table 15.1 on page 62 for program command sequence.
15.6
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. Table 15.1 on page 62 shows the address and data requirements for the chip erase command sequence. When the Embedded Erase algorithm is complete, that bank returns to the read mode and addresses are no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/ BY#. Refer to Write Operation Status on page 64 for information on these status bits. Any commands written during the chip erase operation are ignored. Note that Secured Silicon Sector, autoselect, and CFI functions are unavailable when a [program/erase] operation is in progress. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the chip erase command sequence should be reinitiated once that bank has returned to reading array data, to ensure data integrity. Figure 15.2 on page 59 illustrates the algorithm for the erase operation. Refer to the tables in Erase/Program Operations on page 76 for parameters, and Figure 20.8 on page 78 for timing diagrams.
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15.7
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed by the address of the sector to be erased, and the sector erase command. Table 15.1 on page 62 shows the address and data requirements for the sector erase command sequence. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. After the command sequence is written, a sector erase time-out of 50 s occurs. During the time-out period, additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between these additional cycles must be less than 50 s, otherwise erasure may begin. Any sector erase address and command following the exceeded time-out may or may not be accepted. It is recommended that processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase command is written. If any command other than 30h, B0h, F0h is input during the time-out period, the normal operation will not be guaranteed. The system must rewrite the command sequence and any additional addresses and commands. Note that Secured Silicon Sector, autoselect, and CFI functions are unavailable when a [program/erase] operation is in progress. The system can monitor DQ3 to determine if the sector erase timer has timed out (See the section on DQ3: Sector Erase Timer). The time-out begins from the rising edge of the final WE# pulse in the command sequence. When the Embedded Erase algorithm is complete, the bank returns to reading array data and addresses are no longer latched. Note that while the Embedded Erase operation is in progress, the system can read data from the non-erasing bank. The system can determine the status of the erase operation by reading DQ7, DQ6, DQ2, or RY/BY# in the erasing bank. Refer to Write Operation Status on page 64 for information on these status bits. Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the sector erase command sequence should be reinitiated once that bank has returned to reading array data, to ensure data integrity. Figure 7.2 on page 15 illustrates the algorithm for the erase operation. Refer to the tables in Erase/Program Operations on page 76 for parameters, and Figure 20.8 on page 78 for timing diagrams.
Figure 15.2 Erase Operation
START
Write Erase Command Sequence (Notes 1, 2)
Data Poll to Erasing Bank from System
Embedded Erase algorithm in progress
No
Data = FFh?
Yes Erasure Completed
Notes 1. See Table 15.1 on page 62 for erase command sequence. 2. See the section on DQ3 for information on the sector erase timer.
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15.8
Erase Suspend/Erase Resume Commands
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. The bank address is required when writing this command. This command is valid only during the sector erase operation, including the 80 s time-out period during the sector erase command sequence. The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. When the Erase Suspend command is written during the sector erase operation, the device requires a maximum of 35 s to suspend the erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. Addresses are "don't-cares" when writing the Erase suspend command. After the erase operation has been suspended, the bank enters the erase-suspend-read mode. The system can read data from or program data to any sector not selected for erasure. (The device "erase suspends" all sectors selected for erasure.) Reading at any address within erase-suspended sectors produces status information on DQ7-DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. Refer to Write Operation Status on page 64 for information on these status bits. After an erase-suspended program operation is complete, the bank returns to the erase-suspend-read mode. The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard Word Program operation. Refer to Write Operation Status on page 64 for more information. In the erase-suspend-read mode, the system can also issue the autoselect command sequence. The device allows reading autoselect codes even at addresses within erasing sectors, since the codes are not stored in the memory array. When the device exits the autoselect mode, the device reverts to the Erase Suspend mode, and is ready for another valid operation. Refer to Table 10.9, Secured Silicon Sector Addresses on page 39 and Autoselect Command Sequence on page 56 for details. To resume the sector erase operation, the system must write the Erase Resume command (address bits are don't care). The bank address of the erase-suspended bank is required when writing this command. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after the chip has resumed erasing. If the Persistent Sector Protection Mode Locking Bit is verified as programmed without margin, the Persistent Sector Protection Mode Locking Bit Program Command should be reissued to improve program margin. If the Secured Silicon Sector Protection Bit is verified as programmed without margin, the Secured Silicon Sector Protection Bit Program Command should be reissued to improve program margin. After programming a PPB, two additional cycles are needed to determine whether the PPB has been programmed with margin. If the PPB has been programmed without margin, the program command should be reissued to improve the program margin. Also note that the total number of PPB program/erase cycles is limited to 100 cycles. Cycling the PPBs beyond 100 cycles is not guaranteed. After erasing the PPBs, two additional cycles are needed to determine whether the PPB has been erased with margin. If the PPBs has been erased without margin, the erase command should be reissued to improve the program margin. The programming of either the PPB or DYB for a given sector or sector group can be verified by writing a Sector Protection Status command to the device. Note that there is no single command to independently verify the programming of a DYB for a given sector group.
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15.9
Program Suspend/Program Resume Commands
The Program Suspend command allows the system to interrupt an embedded programming operation so that data can read from any non-suspended sector. When the Program Suspend command is written during a programming process, the device halts the programming operation within tPSL (program suspend latency) and updates the status bits. Addresses are "don't-cares" when writing the Program Suspend command. After the programming operation has been suspended, the system can read array data from any non-suspended sector. The Program Suspend command may also be issued during a programming operation while an erase is suspended. In this case, data may be read from any addresses not in Erase Suspend or Program Suspend. If a read is needed from the Secured Silicon Sector area, then user must use the proper command sequences to enter and exit this region. The system may also write the autoselect command sequence when the device is in Program Suspend mode. The device allows reading autoselect codes in the suspended sectors, since the codes are not stored in the memory array. When the device exits the autoselect mode, the device reverts to Program Suspend mode, and is ready for another valid operation. See "Autoselect Command Sequence" for more information. After the Program Resume command is written, the device reverts to programming. The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard program operation. See "Write Operation Status" for more information. The system must write the Program Resume command (address bits are "don't care") to exit the Program Suspend mode and continue the programming operation. Further writes of the Program Resume command are ignored. Another Program Suspend command can be written after the device has resumed programming.
15.10 Command Definitions Tables
Table 15.1 on page 62 contains the Memory Array Command Definitions.
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Table 15.1 Memory Array Command Definitions
Cycles Bus Cycles (Notes 1-4) Addr RA XXX 555 555 555 555 555 555 555 BA BA 55 XX 555 XX XX XX XXX Data RD F0 AA AA AA AAA AA AA AA B0 30 98 A0 AA A0 80 98 90 XXX 00 PA 2AA PA XX PD 55 PD 10 555 20 2AA 2AA 2AA 2AA 2AA 2AA 2AA 55 55 55 55 55 55 55 (BA) 555 (BA) 555 (BA) 555 (BA) 555 555 555 555 90 90 90 90 A0 80 80 (BA) X00 (BA) X01 X03 (SA) X02 PA 555 555 01 227E (8) XX00/ XX01 PD AA AA 2AA 2AA 55 55 555 SA 10 30 (BA) X0E (10) (BA) X0F (10) Addr Data Addr Data Addr Data Addr Data Addr Data
Command (Notes) Read (5) Reset (6) Manufacturer ID Autoselect (Note 7) Device ID (10) Secured Silicon Sector Factory Protect (8) Sector Group Protect Verify(9) Program Chip Erase Sector Erase Program/Erase Suspend (11) Program/Erase Resume (12) CFI Query (13) Accelerated Program (15) Unlock Bypass Entry (15) Unlock Bypass Program (15) Unlock Bypass Erase (15) Unlock Bypass CFI (13)(15) Unlock Bypass Reset (15)
1 1 4 6 4 4 4 6 6 1 1 1 2 3 2 2 1 2
Legend BA = Address of bank switching to autoselect mode, bypass mode, or erase operation. Determined by PL127J: Amax:A20, PL064J and PL129J: Amax:A19, PL032J: Amax:A18. PA = Program Address (Amax:A0). Addresses latch on falling edge of WE# or CE# (CE1#/CE2# for PL129J) pulse, whichever happens later. PD = Program Data (DQ15:DQ0) written to location PA. Data latches on rising edge of WE# or CE# (CE1#/CE2# for PL129J) pulse, whichever happens first. RA = Read Address (Amax:A0). RD = Read Data (DQ15:DQ0) from location RA. SA = Sector Address (Amax:A12) for verifying (in autoselect mode) or erasing. WD = Write Data. See "Configuration Register" definition for specific write data. Data latched on rising edge of WE#. X = Don't care Notes 1. See Table 10.1 on page 20 for description of bus operations. 2. All values are in hexadecimal. 3. Shaded cells in table denote read cycles. All other cycles are write operations. 4. During unlock and command cycles, when lower address bits are 555 or 2AAh as shown in table, address bits higher than A11 (except where BA is required) and data bits higher than DQ7 are don't cares. 5. No unlock or command cycles required when bank is reading array data. 6. The Reset command is required to return to reading array (or to erase-suspend-read mode if previously in Erase Suspend) when bank is in autoselect mode, or if DQ5 goes high (while bank is providing status information). 7. Fourth cycle of autoselect command sequence is a read cycle. System must provide bank address to obtain manufacturer ID or device ID information. See Autoselect Command Sequence on page 56 for more information. 8. The data is DQ6=1 for factory and customer locked and DQ7=1 for factory locked. 9. The data is 00h for an unprotected sector group and 01h for a protected sector group. 10. Device ID must be read across cycles 4, 5, and 6. PL127J (X0Eh = 2220h, X0Fh = 2200h), PL129J (X0Eh = 2221h, X0Fh = 2200h),PL064J (X0Eh = 2202h, X0Fh = 2201h), PL032J (X0Eh = 220Ah, X0Fh = 2201h). 11. System may read and program in non-erasing sectors, or enter autoselect mode, when in Program/Erase Suspend mode. Program/ Erase Suspend command is valid only during a sector erase operation, and requires bank address. 12. Program/Erase Resume command is valid only during Erase Suspend mode, and requires bank address. 13. Command is valid when device is ready to read array data or when device is in autoselect mode. 14. WP#/ACC must be at VID during the entire operation of command. 15. Unlock Bypass Entry command is required prior to any Unlock Bypass operation. Unlock Bypass Reset command is required to return to the reading array.
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Table 15.2 Sector Protection Command Definitions
Cycles Bus Cycles (Notes 1-4) Addr XXX 555 555 Data F0 AA AA 2AA 2AA 55 55 555 555 88 90 XX 00 RD (0) Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Command (Notes) Reset Secured Silicon Sector Entry (16) Secured Silicon Sector Exit (16) Secured Silicon Protection Bit Program (Notes 5, 6) Secured Silicon Protection Bit Status Password Program (Notes 5, 7, 8) Password Verify (Notes 6, 8, 9) Password Unlock (Notes 7, 10, 11) PPB Program (Notes 5, 6, 11) PPB Status All PPB Erase (Notes 5, 6, 13, 14) PPB Lock Bit Set PPB Lock Bit Status (15) DYB Write (7) DYB Erase (7) DYB Status (6) PPMLB Program (Notes 5, 6, 12) PPMLB Status (5) SPMLB Program (Notes 5, 6, 12) SPMLB Status (5)
1 3 4
6
555
AA
2AA
55
555
60
OW
68
OW
48 RD (0)
OW
5 4 4 7 6 4 6 3 4 4 4 4 6 5 6 5
555 555 555 555 555 555 555 555 555 555 555 555 555 555 555 555
AA AA AA AA AA AA AA AA AA AA AA AA AA AA AA AA
2AA 2AA 2AA 2AA 2AA 2AA 2AA 2AA 2AA 2AA 2AA 2AA 2AA 2AA 2AA 2AA
55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55
555 555 555 555 555 555 555 555 555 555 555 555 555 555 555 555
60 38 C8 28 60 90 60 78 58 48 48 58 60 60 60 60
OW XX [0-3] PWA [0-3] PWA [0] (SA) WP (SA) WP WP
48 PD [0-3] PWD [0-3] PWD [0] 68 RD (0) 60
OW
PWA [1] (SA) WP
PWD [1] 48
PWA [2] (SA) WP
PWD [2] RD(0)
PWA [3]
PWD [3]
(SA)
40
(SA) WP
RD(0)
SA SA SA SA PL PL SL SL
RD (1) X1 X0 RD (0) 68 48 68 48 PL PL SL SL 48 RD (0) 48 RD (0) SL RD(0) PL RD(0)
Legend DYB = Dynamic Protection Bit OW = Address (A7:A0) is (00011010) PD[3:0] = Password Data (1 of 4 portions) PPB = Persistent Protection Bit PWA = Password Address. A1:A0 selects portion of password. PWD = Password Data being verified. PL = Password Protection Mode Lock Address (A7:A0) is (00001010) RD(0) = Read Data DQ0 for protection indicator bit. RD(1) = Read Data DQ1 for PPB Lock status. SA = Sector Address where security command applies. Address bits Amax:A12 uniquely select any sector. SL = Persistent Protection Mode Lock Address (A7:A0) is (00010010) WP = PPB Address (A7:A0) is (00000010) X = Don't care PPMLB = Password Protection Mode Locking Bit SPMLB = Persistent Protection Mode Locking Bit Notes 1. See Table 10.1 on page 20 for description of bus operations. 2. All values are in hexadecimal. 3. Shaded cells in table denote read cycles. All other cycles are write operations.
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4. During unlock and command cycles, when lower address bits are 555 or 2AAh as shown in table, address bits higher than A11 (except where BA is required) and data bits higher than DQ7 are don't cares. 5. The reset command returns device to reading array. 6. Cycle 4 programs the addressed locking bit. Cycles 5 and 6 validate bit has been fully programmed when DQ0 = 1. If DQ0 = 0 in cycle 6, program command must be issued and verified again. 7. Data is latched on the rising edge of WE#. 8. Entire command sequence must be entered for each portion of password. 9. Command sequence returns FFh if PPMLB is set. 10. The password is written over four consecutive cycles, at addresses 0-3. 11. A 2 s timeout is required between any two portions of password. 12. A 100 s timeout is required between cycles 4 and 5. 13. A 1.2 ms timeout is required between cycles 4 and 5. 14. Cycle 4 erases all PPBs. Cycles 5 and 6 validate bits have been fully erased when DQ0 = 0. If DQ0 = 1 in cycle 6, erase command must be issued and verified again. Before issuing erase command, all PPBs should be programmed to prevent PPB overerasure. 15. DQ1 = 1 if PPB locked, 0 if unlocked. 16. Once the Secured Silicon Sector Entry Command sequence has been entered, the standard array cannot be accessed until the Exit SecSi Sector command has been entered or the device has been reset.
16. Write Operation Status
The device provides several bits to determine the status of a program or erase operation: DQ2, DQ3, DQ5, DQ6, and DQ7. Table 16.1 on page 68 and the following subsections describe the function of these bits. DQ7 and DQ6 each offer a method for determining whether a program or erase operation is complete or in progress. The device also provides a hardware-based output signal, RY/BY#, to determine whether an Embedded Program or Erase operation is in progress or has been completed.
16.1
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase algorithm is in progress or completed, or whether a bank is in Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the command sequence. During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system must provide the program address to read valid status information on DQ7. If a program address falls within a protected sector, Data# Polling on DQ7 is active for approximately 1 s, then that bank returns to the read mode. During the Embedded Erase algorithm, Data# Polling produces a "0" on DQ7. When the Embedded Erase algorithm is complete, or if the bank enters the Erase Suspend mode, Data# Polling produces a "1" on DQ7. The system must provide an address within any of the sectors selected for erasure to read valid status information on DQ7. After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 400 s, then the bank returns to the read mode. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a protected sector, the status may not be valid. When the system detects DQ7 has changed from the complement to true data, it can read valid data at DQ15-DQ0 on the following read cycles. Just prior to the completion of an Embedded Program or Erase operation, DQ7 may change asynchronously with DQ15-DQ0 while Output Enable (OE#) is asserted low. That is, the device may change from providing status information to valid data on DQ7. Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device has completed the program or erase operation and DQ7 has valid data, the data outputs on DQ15-DQ0 may be still invalid. Valid data on DQ15-DQ0 will appear on successive read cycles. Table 16.1 on page 68 shows the outputs for Data# Polling on DQ7. Figure 16.1 on page 65 shows the Data# Polling algorithm. Figure 20.10 on page 79 shows the Data# Polling timing diagram.
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Figure 16.1 Data# Polling Algorithm
START
Read DQ7-DQ0 Addr = VA
DQ7 = Data?
Yes
No No
DQ5 = 1?
Yes Read DQ7-DQ0 Addr = VA
DQ7 = Data?
Yes
No FAIL PASS
Notes 1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being erased. During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = "1" because DQ7 may change simultaneously with DQ5.
16.2
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a pull-up resistor to VCC. If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.) If the output is high (Ready), the device is in the read mode, the standby mode, or one of the banks is in the erase-suspend-read mode. Table 16.1 on page 68 shows the outputs for RY/BY#.
16.3
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE# pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out. During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause DQ6 to toggle. The system may use either OE# or CE# to control the read cycles. When the operation is complete, DQ6 stops toggling. After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for approximately 400 s, then returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected.
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The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erasesuspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use DQ7 (see the DQ7: Data# Polling on page 64). If a program address falls within a protected sector, DQ6 toggles for approximately 1 s after the program command sequence is written, then returns to reading array data. DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program algorithm is complete. Table 16.1 on page 68 shows the outputs for Toggle Bit I on DQ6. Figure 16.2 on page 66 shows the toggle bit algorithm. Figure 20.11 on page 80 in shows the toggle bit timing diagrams. Figure 20.12 on page 80 shows the differences between DQ2 and DQ6 in graphical form. See also the DQ2: Toggle Bit II on page 67. Figure 16.2 Toggle Bit Algorithm
START
Read DQ7-DQ0 Addr = VA
DQ7 = Data?
Yes
No No
DQ5 = 1?
Yes Read DQ7-DQ0 Addr = VA
DQ7 = Data?
Yes
No FAIL PASS
Note: The system should recheck the toggle bit even if DQ5 = "1" because the toggle bit may stop toggling as DQ5 changes to "1." See the DQ6: Toggle Bit I on page 65 and DQ2: Toggle Bit II on page 67 for more information.
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16.4
DQ2: Toggle Bit II
The "Toggle Bit II" on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence. DQ2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (The system may use either OE# or CE# (CE1# / CE2# for PL129J) to control the read cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and mode information. Refer to Table 16.1 on page 68 to compare outputs for DQ2 and DQ6. Figure 16.2 on page 66 shows the toggle bit algorithm in flowchart form, and the DQ2: Toggle Bit II on page 67 explains the algorithm. See also the DQ6: Toggle Bit I on page 65. Figure 20.11 on page 80 shows the toggle bit timing diagram. Figure 20.12 on page 80 shows the differences between DQ2 and DQ6 in graphical form.
16.5
Reading Toggle Bits DQ6/DQ2
Refer to Figure 16.2 on page 66 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7-DQ0 at least twice in a row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can read array data on DQ7-DQ0 on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the device did not completed the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 16.2 on page 66).
16.6
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a "1," indicating that the program or erase cycle was not successfully completed. The device may output a "1" on DQ5 if the system tries to program a "1" to a location that was previously programmed to "0." Only an erase operation can change a "0" back to a "1." Under this condition, the device halts the operation, and when the timing limit has been exceeded, DQ5 produces a "1." Under both these conditions, the system must write the reset command to return to the read mode (or to the erase-suspend-read mode if a bank was previously in the erase-suspend-program mode).
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16.7
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the system may read DQ3 to determine whether or not erasure has begun. (The sector erase timer does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire time-out also applies after each additional sector erase command. When the time-out period is complete, DQ3 switches from a "0" to a "1." See also the Sector Erase Command Sequence on page 59. After the sector erase command is written, the system should read the status of DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure that the device has accepted the command sequence, and then read DQ3. If DQ3 is "1," the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored until the erase operation is complete. If DQ3 is "0," the device will accept additional sector erase commands. To ensure the command has been accepted, the system software should check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 is high on the second status check, the last command might not have been accepted. Table 16.1 shows the status of DQ3 relative to the other status bits. Table 16.1 Write Operation Status
Status Standard Mode Embedded Program Algorithm Embedded Erase Algorithm Erase Suspended Sector Non-Erase Suspended Sector Erase-Suspend -Program Program Suspend Mode (Note 3) Reading within Program Suspended Sector Reading within Non-program Suspended Sector Data Data Data Data Data 1 DQ7 (Note 2) DQ7# 0 DQ6 Toggle Toggle DQ5 (Note 1) 0 0 DQ3 N/A 1 DQ2 (Note 2) No toggle Toggle RY/BY# 0 0
1
No toggle
0
N/A
Toggle
1
Erase Suspend Mode
Erase SuspendRead
DQ7# Invalid (Not Allowed)
Toggle Invalid (Not Allowed)
0 Invalid (Not Allowed)
N/A Invalid (Not Allowed)
N/A Invalid (Not Allowed)
0
1
Data
Data
Data
Data
Data
1
Notes: 1. DQ5 switches to `1' when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. Refer to DQ5: Exceeded Timing Limits on page 67 for more information. 2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details. 3. When reading write operation status bits, the system must always provide the bank address where the Embedded Algorithm is in progress. The device outputs array data if the system addresses a non-busy bank.
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17. Absolute Maximum Ratings
Storage Temperature Plastic Packages Ambient Temperature with Power Applied Voltage with Respect to Ground VCC (Note 1) A9, OE#, and RESET# (Note 2) WP#/ACC (Note 2) All other pins (Note 1) Output Short Circuit Current (Note 3) -0.5 V to +4.0 V -0.5 V to +13.0 V -0.5 V to +10.5 V -0.5 V to VCC +0.5 V 200 mA -65C to +150C -65C to +125C
Notes: 1. Minimum DC voltage on input or I/O pins is -0.5 V. During voltage transitions, input or I/O pins may overshoot VSS to -2.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is VCC +0.5 V. During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns. See Figure 17.1 on page 69. 2. Minimum DC input voltage on pins A9, OE#, RESET#, and WP#/ACC is -0.5 V. During voltage transitions, A9, OE#, WP#/ACC, and RESET# may overshoot VSS to -2.0 V for periods of up to 20 ns. See Figure 17.1 on page 69. Maximum DC input voltage on pin A9, OE#, and RESET# is +12.5 V which may overshoot to +14.0 V for periods up to 20 ns. Maximum DC input voltage on WP#/ACC is +9.5 V which may overshoot to +12.0 V for periods up to 20 ns. 3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. 4. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability
Figure 17.1 Maximum Overshoot Waveforms 20 ns +0.8 V -0.5 V -2.0 V 20 ns
Maximum Negative Overshoot Waveform
20 ns VCC +2.0 V VCC +0.5 V 2.0 V 20 ns
20 ns
20 ns
Maximum Positive Overshoot Waveform
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18. Operating Ranges
Operating ranges define those limits between which the functionality of the device is guaranteed.
Industrial (I) Devices
Ambient Temperature (TA) ................-40C to +85C
Wireless (W) Devices
Ambient Temperature (TA) ................-25C to +85C
Supply Voltages
VCC ...................................................2.7-3.6 V VIO (see Note) ...................................1.65-1.95 V (for PL127J and PL129J) or 2.7-3.6 V (for all PLxxxJ devices)
Note: For all AC and DC specifications, VIO = VCC; contact your local sales office for other VIO options.
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19. DC Characteristics
Table 19.1 CMOS Compatible
Parameter ILI ILIT ILR ILO ICC1 ICC2 ICC3 ICC4 ICC5 ICC6 Parameter Description (notes) Input Load Current A9, OE#, RESET# Input Load Current Reset Leakage Current Output Leakage Current VCC Active Read Current (1, 2) VCC Active Write Current (2, 3) VCC Standby Current (2) VCC Reset Current (2) Automatic Sleep Mode (Notes 2, 4) VCC Active Read-While-Program Current (1, 2) VCC Active Read-While-Erase Current (1, 2) VCC Active Program-While-EraseSuspended Current (2, 5) VCC Active Page Read Current (2) Input Low Voltage Test Conditions VIN = VSS to VCC, VCC = VCC max VCC = VCC max; VID= 12.5 V VCC = VCC max; VID= 12.5 V VOUT = VSS to VCC, OE# = VIH VCC = VCC max 5 MHz OE# = VIH, VCC = VCC max OE# = VIH, WE# = VIL CE#, RESET#, WP#/ACC = VIO 0.3 V RESET# = VSS 0.3 V VIH = VIO 0.3 V; VIL = VSS 0.3 V 5 MHz OE# = VIH, 10 MHz 5 MHz OE# = VIH, OE# = VIH OE# = VIH, 8 word Page Read VIO = 1.65-1.95 V (PL127J and PL129J) VIO = 2.7-3.6 V VIH Input High Voltage Voltage for ACC Program Acceleration Voltage for Autoselect and Temporary Sector Unprotect VIO = 1.65-1.95 V (PL127J AND PL129J) VIO = 2.7-3.6 V VHH VID VCC = 3.0 V 10% VCC = 3.0 V 10% IOL = 100 A, VCC = VCC min, VIO = 1.65-1.95 V (PL127J AND PL129J) IOL = 2.0 mA, VCC = VCC min, VIO = 2.7-3.6 V IOH = -100 A, VCC = VCC min, VIO = 1.65-1.95 V (PL127J AND PL129J) IOH = --100 A, VIO = VCC min VLKO Low VCC Lock-Out Voltage (5) VIO-0.1 VCC0.2V 2.3 2.5 -0.4 -0.5 VIO-0.4 2.0 8.5 11.5 10 MHz 10 MHz 20 45 15 0.2 0.2 0.2 21 46 21 46 17 10 Min Typ Max 1.0 35 35 1.0 30 mA 55 25 5 5 5 45 mA 70 45 mA 70 25 15 0.4 0.8 VIO+0.4 VCC+0.3 9.5 12.5 mA mA V V V V V V mA A A A Unit A A A A
ICC7 ICC8 ICC9 VIL
0.1
V
VOL
Output Low Voltage
0.4
V
V
VOH
Output High Voltage
V V
Notes 1. The ICC current listed is typically less than 5 mA/MHz, with OE# at VIH. 2. Maximum ICC specifications are tested with VCC = VCCmax. 3. ICC active while Embedded Erase or Embedded Program is in progress. 4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode current is 2 A. 5. Not 100% tested. 6. In S29PL129J there are two CE# (CE1#, CE2#). 7. Valid CE1#/CE2# conditions: (CE1# = VIL, CE2# = VIH,) or (CE1# = VIH, CE2# = VIL) or (CE1# = VIH, CE2# = VIH)
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20. AC Characteristic
20.1 Test Conditions
Figure 20.1 Test Setups
3.6 V
2.7 k Device Under Test CL 6.2 k Device Under Test CL
VIO Note Diodes are IN3064 or equivalent
= 3.0 V
VIO = 1.8 V (PL127J and PL129J)
Table 20.1 Test Specifications
Test Conditions Output Load Output Load Capacitance, CL (including jig capacitance) Input Rise and Fall Times VIO = 1.8 V (PL127J AND PL129J) VIO = 3.0 V Input Pulse Levels VIO = 1.8 V (PL127J AND PL129J) VIO = 3.0 V Input timing measurement reference levels Output timing measurement reference levels 0.0 - 1.8 V 0.0-3.0 VIO/2 VIO/2 V V All Speeds 1 TTL gate 30 5 pF ns Unit
20.2
Switching Waveforms
Table 20.2 Key To Switching Waveforms
Waveform Inputs Steady Outputs
Changing from H to L
Changing from L to H
Don't Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
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Figure 20.2 Input Waveforms and Measurement Levels
VIO 0.0 V Input VIO/2 Measurement Level VIO/2 Output
20.3
VCC Ramp Rate
All DC characteristics are specified for a VCC ramp rate > 1V/100 s and VCC VCCQ - 100 mV. If the VCC ramp rate is < 1V/100 s, a hardware reset required.+
20.4
Read Operations
Table 20.3 Read-Only Operations
Parameter JEDEC tAVAV tAVQV tELQV tGLQV tEHQZ tGHQZ tAXQX Std. tRC tACC tCE tPACC tOE tDF tDF tOH tOEH Notes 1. Not 100% tested. 2. See Figure 20.1 on page 72 and Table 20.1 on page 72 for test specifications 3. Measurements performed by placing a 50 ohm termination on the data pin with a bias of VCC /2. The time from OE# high to the data bus driven to VCC /2 is taken as tDF. 4. S29PL129J has two CE# (CE1#, CE2#). 5. Valid CE1# / CE2# conditions: (CE1# = VIL,CE2# = VIH) or (CE1# = VIH,CE2# = VIL) or (CE1# = VIH, CE2# = VIH) 6. Valid CE1# / CE2# transitions: (CE1# = VIL,CE2# = VIH) or (CE1# = VIH,CE2# = VIL) to (CE1# = CE2# = VIH) 7. Valid CE1# / CE2# transitions: (CE1# = CE2# = VIH) to (CE1# = VIL,CE2# = VIH) or (CE1# = VIH,CE2# = VIL) 8. For 70 pF Output Load Capacitance, 2 ns will be added to the above tACC,tCE,tPACC,tOE values for all speed grades Read Cycle Time (1) Address to Output Delay Chip Enable to Output Delay Page Access Time Output Enable to Output Delay Chip Enable to Output High Z (3) Output Enable to Output High Z (1, 3) Output Hold Time From Addresses, CE# or OE#, Whichever Occurs First (3) Output Enable Hold Time (1) Read Toggle and Data# Polling CE#, OE# = VIL OE# = VIL Description (Notes) Test Setup Min Speed Options 55 55 Max 55 Max 55 Max 20 Max 20 Max Max Min Min Min 60 60 60 60 25 25 16 16 5 0 10 65 65 65 65 25 70 70 70 70 30 Unit ns ns ns ns ns ns ns ns ns ns
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Figure 20.3 Read Operation Timings
tRC Addresses CE# tRH tRH OE# tOEH WE tCE Data RESET# RY/BY# High Z Valid Data tOH High Z tOE tD Addresses Stable tACC
0V
Notes 1. S29PL129J - During CE1# transitions, CE2# = VIH; During CE2# transitions, CE1# = VIH 2. S29PL129J - There are two CE# (CE1#, CE2#). In the above waveform CE# = CE1# or CE2#
Figure 20.4 Page Read Operation Timings
Amax-A3
Same Page
A2-A0
Aa
tACC
Ab
tPACC
Ac
tPACC tPACC
Ad
Data CE# OE#
Qa
Qb
Qc
Qd
Notes 1. S29PL129J - During CE1# transitions, CE2# = VIH; During CE2# transitions, CE1# = VIH 2. S29PL129J - There are two CE# (CE1#, CE2#). In the above waveform CE# = CE1# or CE2#
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20.5
Reset
Table 20.4 Hardware Reset (RESET#)
Parameter JEDEC Std tReady tReady tRP tRH tRPD tRB Note Not 100% tested. Description RESET# Pin Low (During Embedded Algorithms) to Read Mode (See Note) RESET# Pin Low (NOT During Embedded Algorithms) to Read Mode (See Note) RESET# Pulse Width Reset High Time Before Read (See Note) RESET# Low to Standby Mode RY/BY# Recovery Time Max Max Min Min Min Min All Speed Options 20 500 500 50 20 0
Unit s ns ns ns s ns
Figure 20.5 Reset Timings
RY/BY#
CE#, OE# tRH RESET# tRP tReady
Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms
tReady RY/BY# tRB CE#, OE#
RESET# tRP Notes 1. S29PL129J - During CE1# transitions, CE2# = VIH; During CE2# transitions, CE1# = VIH
2. S29PL129J - There are two CE# (CE1#, CE2#). In the below waveform CE# = CE1# or CE2#
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20.6
Erase/Program Operations
Table 20.5 Erase and Program Operations
Parameter JEDEC Std Description Write Cycle Time (Note 1) Address Setup Time Address Setup Time to OE# low during toggle bit polling Address Hold Time Address Hold Time From CE# (CE1#, CE#2 in PL129J) or OE# high during toggle bit polling Data Setup Time Data Hold Time Min Min Min Min Min Min Min Min Min Min Min Min Min Min Typ Typ Typ Min Min Max Min Program Suspend Latency Erase Suspend Latency Max Max 20 0 6 4 0.5 50 0 90 35 35 35 25 0 10 0 0 0 35 25 30 0 30 Speed Options (ns) 55 55 60 60 0 15 35 65 65 70 70 ns ns ns ns ns ns ns ns ns ns ns ns ns s s sec s ns ns ns s s Unit
tAVAV tAVWL tWLAX
tWC tAS tASO tAH tAHT
tDVWH tWHDX
tDS tDH
tOEPH Output Enable High during toggle bit polling tGHWL tELWL tWHEH tWLWH tWHDL
Read Recovery Time Before Write tGHWL (OE# High to WE# Low)
tCS tCH tWP tWPH
CE# (CE1# or CE#2 in PL129J) Setup Time CE# (CE1# or CE#2 in PL129J) Hold Time Write Pulse Width Write Pulse Width High
tSR/W Latency Between Read and Write Operations tWHWH tWHW
1 H1
Programming Operation (Note 4) Accelerated Programming Operation (Note 4) Sector Erase Operation (Note 4) VCC Setup Time (Note 1) Write Recovery Time from RY/BY# Program/Erase Valid to RY/BY# Delay
tWHWH tWHW
1 H1
tWHWH tWHW
2 H2
tVCS tRB tBUSY tPSL tESL
Notes: 1. Not 100% tested. 2. S29PL129J - During CE1# transitions, CE2# = VIH; During CE2# transitions, CE1# = VIH 3. S29PL129J - There are two CE# (CE1#, CE2#). 4. See Table 21.4 on page 84 for more information.
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20.7
Timing Diagrams
Figure 20.6 Program Operation Timings
Program Command Sequence (last two cycles) tWC Addresses 555h tAS PA tAH CE# OE# tWP WE# tCS tDS Data tDH PD tBUSY RY/BY# tWPH
Read Status Data (last two cycles)
PA
PA
tCH
tWHWH1
A0h
Status
DOUT tRB
VCC tVCS
Notes 1. PA = program address, PD = program data, DOUT is the true data at the program address 2. S29PL129J - During CE1# transitions, CE2# = VIH; During CE2# transitions, CE1# = VIH 3. S29PL129J - There are two CE# (CE1#, CE2#). In the above waveform CE# = CE1# or CE2#
Figure 20.7 Accelerated Program Timing Diagram
VHH
WP#/ACC
VIL or VIH tVHH tVHH
VIL or VIH
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Figure 20.8 Chip/Sector Erase Operation Timings
Erase Command Sequence (last two cycles) tWC Addresses 2AAh tAS SA
555h for chip erase
Read Status Data
VA tAH
VA
CE#
OE# tWP WE# tCS tDS
tCH
tWPH
tWHWH2
tDH Data 55h 30h
10 for Chip Erase Status DOUT
tBUSY RY/BY# tVCS VCC
Notes 1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see Write Operation Status on page 64 2. S29PL129J - During CE1# transitions, CE2# = VIH; During CE2# transitions, CE1# = VIH 3. S29PL129J - There are two CE# (CE1#, CE2#). In the above waveform CE# = CE1# or CE2#.
tRB
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Figure 20.9 Back-to-back Read/Write Cycle Timings
tWC Addresses tAS CE#
Valid PA
tRC
Valid RA
tWC
Valid PA
tWC
Valid PA
tAH tACC tCE tOE OE# tOEH tWP WE# tWPH tDS tDH Data
Valid In
tAS tCPH
tAH
tCP
tGHWL
tDF tOH
Valid Out Valid In Valid In
tSR/W
WE# Controlled Write Cycle Read Cycle CE# Controlled Write Cycles
Figure 20.10 Data# Polling Timings (During Embedded Algorithms)
tRC Addresses VA tACC tCE CE# tCH OE# tOEH WE# tOH DQ7
High Z
VA
VA
tOE tDF
Complement
Complement
True
Valid Data
High Z
DQ6-DQ0 tBUSY RY/BY#
Status Data
Status Data
True
Valid Data
Note VA = Valid address. The illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle
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Figure 20.11 Toggle Bit Timings (During Embedded Algorithms)
tAHT Addresses tAHT tASO CE# tOEH WE# tOEPH OE# tDH DQ6/DQ2 Valid Data
Valid Status
tAS
tCEPH
tOE
Valid Status Valid Status
Valid Data
(first read) RY/BY#
(second read)
(stops toggling)
Notes 1. VA = Valid address; not required for DQ6. The illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle 2. S29PL129J - During CE1# transitions, CE2# = VIH; During CE2# transitions, CE1# = VIH 3. S29PL129J - There are two CE# (CE1#, CE2#). In the above waveform CE# = CE1# or CE2#
Figure 20.12 DQ2 vs. DQ6 Enter Embedded Erasing WE# Erase Suspend Erase Enter Erase Suspend Program Erase Suspend Program Erase Resume Erase Suspend Read Erase Erase Complete
Erase Suspend Read
DQ6
DQ2
Note DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle DQ2 and DQ6.
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21. Protect/Unprotect
Table 21.1 Temporary Sector Unprotect
Parameter JEDEC Std tVIDR tVHH tRSP tRRB Note Not 100% tested. Description VID Rise and Fall Time (See Note) VHH Rise and Fall Time (See Note) RESET# Setup Time for Temporary Sector Unprotect RESET# Hold Time from RY/BY# High for Temporary Sector Unprotect Min Min Min Min All Speed Options 500 250 4 4 ns ns s s Unit
Figure 21.1 Temporary Sector Unprotect Timing Diagram
VID RESET# VIL or VIH tVIDR Program or Erase Command Sequence CE# tVIDR VIL or VIH VID
WE# tRSP RY/BY# tRRB
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Figure 21.2 Sector/Sector Block Protect and Unprotect Timing Diagram
VID VIH
RESET#
SA, A6, A1, A0
Valid* Sector Group Protect/Unprotect
Valid* Verify 40h
Valid*
Data 1 s CE#
60h
60h
Status
Sector Group Protect: 150 s Sector Group Unprotect: 15 ms
WE#
OE#
Notes 1. For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0. 2. S29PL129J - During CE1# transitions, CE2# = VIH; During CE2# transitions, CE1# = VIH 3. S29PL129J - There are two CE# (CE1#, CE2#). In the above waveform CE# = CE1# or CE2#
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21.1
Controlled Erase Operations
Table 21.2 Alternate CE# Controlled Erase and Program Operations
Parameter Speed Options Std tWC tAS tAH tDS tDH tGHEL tWS tWH tCP tCPH tWHWH1 tWHWH1 tWHWH2 Write Cycle Time (Note 1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Read Recovery Time Before Write (OE# High to WE# Low) WE# Setup Time WE# Hold Time CE# (CE1# or CE#2 in PL129J) Pulse Width CE# (CE1# or CE#2 in PL129J) Pulse Width High Programming Operation (Note 2) Accelerated Programming Operation (Note 2) Sector Erase Operation (Note 2) Description (Notes) Min Min Min Min Min Min Min Min Min Min Typ Typ Typ 35 20 6 4 0.5 30 25 0 0 0 0 40 25 55 55 60 60 0 35 30 65 65 70 70 Unit ns ns ns ns ns ns ns ns ns ns s s sec
JEDEC tAVAV tAVWL tELAX tDVEH tEHDX tGHEL tWLEL tEHWH tELEH tEHEL tWHWH1 tWHWH1 tWHWH2
Notes 1. Not 100% tested. 2. See Erase And Programming Performance on page 84 for more information.
Figure 21.3 Alternate CE# Controlled Write (Erase/Program) Operation Timings
555 for program 2AA for erase PA for program SA for sector erase 555 for chip erase
Data# Polling PA
Addresses tWC tWH WE# tGHEL OE# tCP CE# tWS tCPH tDS tDH Data tRH
A0 for program 55 for erase PD for program 30 for sector erase 10 for chip erase
tAS tAH
tWHWH1 or 2
tBUSY
DQ7#
DOUT
RESET#
RY/BY#
Notes 1. Figure indicates last two bus cycles of a program or erase operation. 2. PA = program address, SA = sector address, PD = program data. 3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device 4. S29PL129J - During CE1# transitions, CE2# = VIH; During CE2# transitions, CE1# = VIH 5. S29PL129J - There are two CE# (CE1#, CE2#). In the above waveform CE# = CE1# or CE2#
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Table 21.3 CE1#/CE2# Timing (S29PL129J only)
Parameter JEDEC Std tCCR Description CE1#/CE2# Recover Time (See Note) Min All Speed Options 0 Unit ns
Note This parameter is defined for CE1#/CE2# recover time for read/read, program/read, and read/program operations. Program/program operation are not allowed and only a single program operation is allowed at one time.
Figure 21.4 Timing Diagram for Alternating Between CE1# and CE2# Control
CE1#
tCCR CE2#
tCCR
Table 21.4 Erase And Programming Performance
Parameter Sector Erase Time PL127J/129J Chip Erase Time PL064J PL032J Word Program Time Accelerated Word Program Time PL127J/129J Chip Program Time (Note 3) PL064J PL032J Typ (Note 1) 0.5 135 71 39 6 4 50.4 25.2 12.6 Max (Note 2) 2 216 113.6 62.4 100 60 200 50.4 25.2 Unit sec sec sec sec s s sec sec sec Excludes system level overhead (Note 5) Excludes 00h programming prior to erasure (Note 4) Comments
Notes 1. Typical program and erase times assume the following conditions: 25C, 3.0 V VCC, 100,000 cycles. Additionally, programming typicals assume checkerboard pattern. All values are subject to change. 2. Under worst case conditions of 90C, VCC = 2.7 V, 1,000,000 cycles. All values are subject to change. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program times listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 15.1 on page 62 for further information on command definitions. 6. The device has a minimum erase and program cycle endurance of 100,000 cycles.
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22. BGA Pin Capacitance
Parameter Symbol CIN COUT CIN2 CIN3 Notes 1. Sampled, not 100% tested. 2. Test conditions TA = 25C, f = 1.0 MHz. Parameter Description Input Capacitance Output Capacitance Control Pin Capacitance WP#/ACC Pin Capacitance Test Setup VIN = 0 VOUT = 0 VIN = 0 VIN = 0 Typ 6.3 7.0 5.5 11 Max 7 8 8 12 Unit pF pF pF pF
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23. Physical Dimensions
23.1 VBG080--80-Ball Fine-pitch Ball Grid Array 8 x 11 mm Package (PL127J)
0.05 C (2X)
D
A
D1 e
8
e
7 6 5
7
SE E1
E
4 3 2 1 M L K J H G F E D C B A
INDEX MARK
A1 CORNER
PIN A1 CORNER
B
10
6
NXb
0.08 M C 0.15 M C A B
SD
7
0.05 C (2X)
TOP VIEW
BOTTOM VIEW
A
A1
SEATING PLANE
A2
0.10 C
C
0.08 C
SIDE VIEW
NOTES: PACKAGE JEDEC VBG 080 N/A 11.00 mm x 8.00 mm NOM PACKAGE SYMBOL A A1 A2 D E D1 E1 MD ME N b e SD / SE 0.33 MIN --0.18 0.62 NOM ------11.00 BSC. 8.00 BSC. 8.80 BSC. 5.60 BSC. 12 8 80 --0.80 BSC. 0.40 BSC. (A3-A6,B3-B6,L3-L6,M3-M6) 0.43 MAX 1.00 --0.76 NOTE OVERALL THICKNESS BALL HEIGHT BODY THICKNESS BODY SIZE BODY SIZE BALL FOOTPRINT BALL FOOTPRINT ROW MATRIX SIZE D DIRECTION ROW MATRIX SIZE E DIRECTION TOTAL BALL COUNT BALL DIAMETER BALL PITCH SOLDER BALL PLACEMENT DEPOPULATED SOLDER BALLS 6 7 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994. 2. ALL DIMENSIONS ARE IN MILLIMETERS. 3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT AS NOTED). 4. e REPRESENTS THE SOLDER BALL GRID PITCH.
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE "D" DIRECTION. SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE "E" DIRECTION. N IS THE TOTAL NUMBER OF SOLDER BALLS. DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE PARALLEL TO DATUM C. SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW. WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW PARALLEL TO THE D OR E DIMENSION, RESPECTIVELY, SD OR SE = 0.000. WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, SD OR SE = e/2 8. NOT USED. 9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS. 10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
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23.2
VBH064--64-Ball Fine-pitch Ball Grid Array 8 x 11.6 mm package (PL127J)
0.05 C (2X)
D
A
D1 e
10 9
e
8 7 6
7
SE E1
E
5 4 3 2 1 M L K J H G F E D C B A
A1 CORNER
A1 CORNER
INDEX MARK
B
10
0.05 C (2X)
6
SD
0.08 M C 0.15 M C A B
7
NXb
TOP VIEW
BOTTOM VIEW
A
A1
SEATING PLANE
A2
0.10 C
C
0.08 C
SIDE VIEW
NOTES: PACKAGE JEDEC VBH 064 N/A 11.60 mm x 8.00 mm NOM PACKAGE SYMBOL A A1 A2 D E D1 E1 MD ME N b e SD / SE 0.33 MIN --0.18 0.62 NOM ------11.60 BSC. 8.00 BSC. 8.80 BSC. 7.20 BSC. 12 10 64 --0.80 BSC. 0.40 BSC. (A2-9,B1-4,B7-10,C1-K1, M2-9,C10-K10,L1-4,L7-10, G5-6,F5-6) 0.43 MAX 1.00 --0.76 NOTE OVERALL THICKNESS BALL HEIGHT BODY THICKNESS BODY SIZE BODY SIZE BALL FOOTPRINT BALL FOOTPRINT ROW MATRIX SIZE D DIRECTION ROW MATRIX SIZE E DIRECTION TOTAL BALL COUNT BALL DIAMETER BALL PITCH SOLDER BALL PLACEMENT DEPOPULATED SOLDER BALLS 6 7 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994. 2. ALL DIMENSIONS ARE IN MILLIMETERS. 3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT AS NOTED). 4. e REPRESENTS THE SOLDER BALL GRID PITCH.
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE "D" DIRECTION. SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE "E" DIRECTION. N IS THE TOTAL NUMBER OF SOLDER BALLS. DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE PARALLEL TO DATUM C. SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW. WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW PARALLEL TO THE D OR E DIMENSION, RESPECTIVELY, SD OR SE = 0.000. WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, SD OR SE = e/2 8. NOT USED. 9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS. 10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
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23.3
VBK048--48-Ball Fine-pitch Ball Grid Array 8.15 x 6.15 mm package (PL032J and PL064J)
0.10 (4X)
D
A
D1
6 5
e
7
4 3 2 1 H G F E D C B A
E
SE
E1
PIN A1 CORNER
INDEX MARK
B
6
b
0.08 M C 0.15 M C A B
SD
7
A1 CORNER
10
TOP VIEW
BOTTOM VIEW
A A1
SEATING PLANE
A2
0.10 C
C
0.08 C
SIDE VIEW
NOTES: PACKAGE JEDEC VBK 048 N/A 8.15 mm x 6.15 mm NOM PACKAGE SYMBOL A A1 A2 D E D1 E1 MD ME N b e SD / SE 0.33 MIN --0.18 0.62 NOM ------8.15 BSC. 6.15 BSC. 5.60 BSC. 4.00 BSC. 8 6 48 --0.80 BSC. 0.40 BSC. --0.43 MAX 1.00 --0.76 NOTE OVERALL THICKNESS BALL HEIGHT BODY THICKNESS BODY SIZE BODY SIZE BALL FOOTPRINT BALL FOOTPRINT ROW MATRIX SIZE D DIRECTION ROW MATRIX SIZE E DIRECTION TOTAL BALL COUNT BALL DIAMETER BALL PITCH SOLDER BALL PLACEMENT DEPOPULATED SOLDER BALLS 6 7 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994. 2. ALL DIMENSIONS ARE IN MILLIMETERS. 3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT AS NOTED). 4. e REPRESENTS THE SOLDER BALL GRID PITCH.
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE "D" DIRECTION. SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE "E" DIRECTION. N IS THE TOTAL NUMBER OF SOLDER BALLS. DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE PARALLEL TO DATUM C. SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW. WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW PARALLEL TO THE D OR E DIMENSION, RESPECTIVELY, SD OR SE = 0.000. WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, SD OR SE = e/2 8. NOT USED. 9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS. 10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
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23.4
VBU056--56-Ball Fine-pitch BGA 7 x 9mm package (PL064J and PL032J)
D
0.05 C (2X)
8 7 6
A
e
D1
SE 7 E1
E e
5 4 3 2 1 H G F E D C B A
10
A1 CORNER INDEX MARK
A1 CORNER
B
6
NXb
0.08 M C 0.15 M C A B
SD
7
TOP VIEW
0.05 C (2X)
BOTTOM VIEW A A1
SEATING PLANE
A2
C
0.10 C
0.08 C
SIDE VIEW
NOTES: PACKAGE JEDEC VBU 056 N/A 9.00 mm x 7.00 mm NOM PACKAGE SYMBOL A A1 A2 D E D1 E1 MD ME N b e SD / SE 0.35 MIN --0.17 0.62 NOM ------9.00 BSC. 7.00 BSC. 5.60 BSC. 5.60 BSC. 8 8 56 0.40 0.80 BSC. 0.40 BSC. A1,A8,D4,D5,E4,E5,H1,H8 0.45 MAX 1.00 --0.76 NOTE OVERALL THICKNESS BALL HEIGHT BODY THICKNESS BODY SIZE BODY SIZE BALL FOOTPRINT BALL FOOTPRINT ROW MATRIX SIZE D DIRECTION ROW MATRIX SIZE E DIRECTION TOTAL BALL COUNT BALL DIAMETER BALL PITCH SOLDER BALL PLACEMENT DEPOPULATED SOLDER BALLS 6 7 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994. 2. ALL DIMENSIONS ARE IN MILLIMETERS. 3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT AS NOTED). 4. e REPRESENTS THE SOLDER BALL GRID PITCH.
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE "D" DIRECTION. SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE "E" DIRECTION. N IS THE TOTAL NUMBER OF SOLDER BALLS. DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE PARALLEL TO DATUM C. SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW. WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW PARALLEL TO THE D OR E DIMENSION, RESPECTIVELY, SD OR SE = 0.000. WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, SD OR SE = e/2 8. NOT USED. 9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS. 10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
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23.5
TS056--20 x 14 mm, 56-pin TSOP (PL127J)
STANDARD PIN OUT (TOP VIEW) A2 2
1 N
0.10 C
-A-
SEE DETAIL B
-BE5 e
N 2
N +1 2
D1 D
5 4
A1 C SEATING PLANE A
0.08MM (0.0031") M C A-B S
B B
SEE DETAIL A
7
b
6
7 WITH PLATING
(c)
c1
b1
R c
GAGE LINE
e/2
BASE METAL
SECTION B-B
0
PARALLEL TO SEATING PLANE
0.25MM (0.0098") BSC
-X-
L
X = A OR B
DETAIL A
DETAIL B
Package Jedec Symbol A A1 A2 b1 b c1 c D D1 E e L 0 R N MIN
TS 056 MO-142 (B) EC MAX 1.20 0.15 0.05 1.00 0.95 1.05 0.20 0.23 0.17 0.22 0.17 0.27 0.10 0.16 0.10 0.21 19.80 20.00 20.20 18.30 18.40 18.50 13.90 14.00 14.10 0.50 BASIC 0.50 0.70 0.60 3 0 5 0.08 0.20 56 NOM
NOTES:
1 2 3 4
CONTROLLING DIMENSIONS ARE IN MILLIMETERS (MM). (DIMENSIONING AND TOLERANCING CONFORMS TO ANSI Y14.5M-1982) PIN 1 IDENTIFIER FOR STANDARD PIN OUT (DIE UP). PIN 1 IDENTIFIER FOR REVERSE PIN OUT (DIE DOWN), INK OR LASER MARK. TO BE DETERMINED AT THE SEATING PLANE -C- . THE SEATING PLANE IS DEFINED AS THE PLANE OF CONTACT THAT IS MADE WHEN THE PACKAGE LEADS ARE ALLOWED TO REST FREELY ON A FLAT HORIZONTAL SURFACE. DIMENSIONS D1 AND E DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE MOLD PROTUSION IS 0.15MM (.0059") PER SIDE. DIMENSION b DOES NOT INCLUDE DAMBAR PROTUSION. ALLOWABLE DAMBAR PROTUSION SHALL BE 0.08 (0.0031") TOTAL IN EXCESS OF b DIMENSION AT MAX. MATERIAL CONDITION. MINIMUM SPACE BETWEEN PROTRUSION AND AN ADJACENT LEAD TO BE 0.07 (0.0028"). THESE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10MM (.0039") AND 0.25MM (0.0098") FROM THE LEAD TIP. LEAD COPLANARITY SHALL BE WITHIN 0.10MM (0.004") AS MEASURED FROM THE SEATING PLANE. DIMENSION "e" IS MEASURED AT THE CENTERLINE OF THE LEADS.
5 6
7 8 9
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24. Revision Summary
24.1 Revision A0 (January 29, 2004)
Initial release.
24.2
Revision A1 (February 12, 2004)
Software Features
Included backward compatibility with MBM29xx families.
General Description
48-ball BGA package is not supported and was removed.
Ordering Information
Model numbers for the 48-ball BGA configurations were removed.
64-Ball Fine Pitch BGA--MCP Compatible
An illustration was added to show the pin-out configuration.
Table 20
Added the description of 01h for address 4Fh and removed the 0004 data.
Table 34
Provided the time units of measure for the erase and programming performances.
24.3
Revision A2 (February 17, 2004)
Memory Array Command Definitions, Table
Corrected typo in device ID.
24.4
Revision A3 (February 25, 2004)
Architectural Advantages
Added 3V VIO for PL064J and PL032J devices.
Ordering Information
Corrected the voltage rating, ball configuration, and physical dimensions for model numbers 12 and 13.
Connection Diagrams
Removed the 64-ball, 8x9 mm diagram.
Operating Ranges
Clarified the supply voltages that apply to the PL127J/PL129J and all other PLxxxJ products.
BGA Pin Capacitance
Added information applicable to the CIN3 symbol.
Package Drawings
Removed the 9x8 mm package drawing.
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24.5
Revision A4 (February 27, 2004)
Connection Diagrams
Added the 56-ball 7x9 mm pinout diagram.
Package Options
Updated to include the 8 x 6 mm, 48-ball Fine pitch BGA and 7 x 9 mm, 56-ball Fine-pitch BGA options.
Physical Dimensions
Added the VBK048 package drawing.
24.6
Revision A5 (March 15, 2004)
Connection Diagrams
Changed names.
24.7
Revision A6 (August 30, 2004)
Global
Removed VIO, added TSOP, fixed Secured Silicon DQ bits.
Product Selector Guide
Updated specs in this table.
Ordering Information
Updated the Model Number offerings.
Valid Combinations Table (128Mb)
Corrected the Package Markings for the 64-ball FBGA packages. Added combinations for the TLC056 package on the PL064J and PL032J devices.
Valid Combinations for BGA Packages (128Mb)
Updated information in this table.
Package Options
Added the 7 x 9mm 56-ball package.
Connection Diagram
56-ball connection diagram
Erase/Programming Performance Table
Notes 1 and 2 corrected to reflect accurate temperature ranges and cycling.
24.8
Revision A7 (March 2, 2005)
Ordering Information
Updated the Model Number offerings
Valid Combinations table
Updated the Package Types information.
Figure 6, In-System Sector Protection/Sector Unprotection Algorithms
Updated the illustration.
Program Suspend/Program Resume Commands
New section added. Made global changes to include program suspend/resume commands.
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Table 29 on page 82
Added Erase Suspend Latency.
Table 32, CE1#/CE2# Timing (S29PL129J only)
Updated table and added a notes section.
Physical Dimensions
Added the VBU056 package.
24.9
Revision A8 (July 29, 2005)
Autoselect Codes (High Voltage Method) Table
Added note: When Polling the SecSi indicator bit the Bank Address (BA) should be set within the address range 004000h-03FFFFh.
Autoselect Codes for PL129J Table
Added note: When Polling the SecSi indicator bit the A21 to A12 should be set within the address range 004000h-03FFFFh.
Secured Silicon Sector Flash Memory Region
Added sentence: Once the Enter Secured Silicon Sector Command sequence has been entered, the standard array cannot be accessed until the Exit Secured Silicon Sector command has been entered or the device has been reset.
Sector Protection Command Definitions Table
Added note 16: Once the Secured Silicon Sector Entry Command sequence has been entered, the standard array cannot be accessed until the Exit Secured Silicon Sector command has been entered or the device has been reset.
Valid Combinations
Content the same, tables consolidated to match Ordering Information Descriptions
Connection Diagrams Section
Consolidated Special Package Handling Instructions and put the information before the package/pinout descriptions. Added Figure numbers to the connection diagram graphics.
Operating Ranges
Updated operating temperatures.
DC Characteristics Table
Updated VOH parameter.
Erase/Program Operations Table
Added tESL parameter
VBK048--48-Ball Fine-pitch Ball Grid Array 8.15 x 6.15 mm package (PL032J and PL064J)
Updated the product that uses this package from PL127J to PL064J and PL032J
24.10 Revision A9 (September 22, 2006)
64-Ball Fine-Pitch BGA--MCP Compatible--PL127J
Changed ball F9 to A22
September 22, 2006 S29PL-J_00_A9
S29PL-J
93
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Colophon The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior authorization by the respective government entity will be required for export of those products. Trademarks and Notice The contents of this document are subject to change without notice. This document may contain information on a Spansion product under development by Spansion. Spansion reserves the right to change or discontinue work on any product without notice. The information in this document is provided as is without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose, merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. Spansion assumes no liability for any damages of any kind arising out of the use of the information in this document. Copyright (c) 2004-2006 Spansion Inc. All Rights Reserved. Spansion, the Spansion logo, MirrorBit, ORNAND, HD-SIM, and combinations thereof are trademarks of Spansion Inc. Other names are for informational purposes only and may be trademarks of their respective owners.
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